SSM6J511NU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM6J511NU
   Código: SPA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 47 nC
   tonⓘ - Tiempo de encendido: 50 nS
   Cossⓘ - Capacitancia de salida: 590 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0091 Ohm
   Paquete / Cubierta: SOT1220 UDFN6B

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SSM6J511NU Datasheet (PDF)

..1. Size:295K toshiba
ssm6j511nu.pdf

SSM6J511NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J511NUSSM6J511NUSSM6J511NUSSM6J511NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.8 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 13.5 m (max) (@VGS = -2.5 V) RDS(ON) = 10 m (max) (@VGS =

7.1. Size:277K toshiba
ssm6j51tu.pdf

SSM6J51TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J51TU High Current Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on-resistance: Ron = 54 m (max) (@VGS = -2.5 V) 85 m (max) (@VGS = -1.8 V) 150m(max) (@VGS = -1.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

7.2. Size:370K toshiba
ssm6j512nu.pdf

SSM6J512NUMOSFETs Silicon P-Channel MOSSSM6J512NUSSM6J512NUSSM6J512NUSSM6J512NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.8 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 24.0 m (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 m (typ.) (@VGS = -2.5 V

8.1. Size:240K toshiba
ssm6j507nu.pdf

SSM6J507NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J507NUSSM6J507NUSSM6J507NUSSM6J507NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 20 m (max) (@VGS = -10 V) RDS(ON) = 28 m (max) (@VGS = -4.5

8.2. Size:299K toshiba
ssm6j53fe.pdf

SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE High-Speed Switching Applications Unit : mm Power Management Switch Applications 1.60.051.20.05 1.5 V drive Suitable for high-density mounting due to compact package 1 6 Low on-resistance : Ron = 136 m (max) (@VGS = -2.5 V) : Ron = 204 m (max) (@VGS = -1.8 V) 52:

8.3. Size:237K toshiba
ssm6j503nu.pdf

SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J503NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON)= 89.6 m (max) (@VGS = -1.5 V) RDS(ON) = 57.9 m (max) (@VGS = -1.8 V) RDS(ON) = 41.7 m (max) (@VGS = -2.5 V) RDS(ON) = 32.4 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C

8.4. Size:236K toshiba
ssm6j502nu.pdf

SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J502NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 60.5 m (max) (@VGS = -1.5 V) RDS(ON) = 38.4 m (max) (@VGS = -1.8 V) RDS(ON) = 28.3 m (max) (@VGS = -2.5 V) RDS(ON) = 23.1 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C

8.5. Size:241K toshiba
ssm6j50tu.pdf

SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J50TU High Current Switching Applications Unit: mm Compact package suitable for high-density mounting Low on-resistance: Ron = 205m (max) (@VGS = -2.0 V) Ron = 100m (max) (@VGS = -2.5 V) Ron = 64m (max) (@VGS = -4.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Ra

8.6. Size:205K toshiba
ssm6j501nu.pdf

SSM6J501NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J501NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: RDS(ON) = 43.0 m (max) (@VGS = -1.5 V) RDS(ON) = 26.5 m (max) (@VGS = -1.8 V) RDS(ON) = 19.0 m (max) (@VGS = -2.5 V) RDS(ON) = 15.3 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C

8.7. Size:235K toshiba
ssm6j505nu.pdf

SSM6J505NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J505NUSSM6J505NUSSM6J505NUSSM6J505NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.2 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 61 m (max) (@VGS = -1.2 V) RDS(ON) = 30 m (max) (@VGS = -

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