All MOSFET. SSM6J511NU Datasheet

 

SSM6J511NU Datasheet and Replacement


   Type Designator: SSM6J511NU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 50 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm
   Package: SOT1220 UDFN6B
 

 SSM6J511NU substitution

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SSM6J511NU Datasheet (PDF)

 ..1. Size:295K  toshiba
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SSM6J511NU

SSM6J511NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J511NUSSM6J511NUSSM6J511NUSSM6J511NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.8 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 13.5 m (max) (@VGS = -2.5 V) RDS(ON) = 10 m (max) (@VGS =

 7.1. Size:277K  toshiba
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SSM6J511NU

SSM6J51TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J51TU High Current Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on-resistance: Ron = 54 m (max) (@VGS = -2.5 V) 85 m (max) (@VGS = -1.8 V) 150m(max) (@VGS = -1.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

 7.2. Size:370K  toshiba
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SSM6J511NU

SSM6J512NUMOSFETs Silicon P-Channel MOSSSM6J512NUSSM6J512NUSSM6J512NUSSM6J512NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.8 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 24.0 m (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 m (typ.) (@VGS = -2.5 V

 8.1. Size:240K  toshiba
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SSM6J511NU

SSM6J507NUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J507NUSSM6J507NUSSM6J507NUSSM6J507NU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 4 V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 20 m (max) (@VGS = -10 V) RDS(ON) = 28 m (max) (@VGS = -4.5

Datasheet: SSM3J56ACT , SSM3K344R , SSM3K345R , SSM3K35AMFV , SSM3K361R , SSM3K56ACT , SSM3K7002CFU , SSM3K72KFS , 10N60 , T2N7002AK , T2N7002BK , TK290P65Y , TK380P60Y , TK380P65Y , TK750A60F , TPCA8123 , TPH1500CNH .

History: IPB07N03L | PSMN4R3-80BS | STK830F | IRF3410 | KIA8N60H-220 | IRFS244 | IPP70N10S3L-12

Keywords - SSM6J511NU MOSFET datasheet

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