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TPCA8123 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPCA8123

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 84 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 680 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0111 Ohm

Encapsulados: SOP8

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TPCA8123 datasheet

 ..1. Size:357K  toshiba
tpca8123.pdf pdf_icon

TPCA8123

TPCA8123 MOSFET P MOS (U-MOS ) TPCA8123 TPCA8123 TPCA8123 TPCA8123 1. 1. 1. 1. 2. 2. 2. 2. (1) , (2) RDS(ON) = 8.5 m ( ) (VGS = -10 V) (3)

 7.1. Size:240K  toshiba
tpca8124.pdf pdf_icon

TPCA8123

TPCA8124 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCA8124 TPCA8124 TPCA8124 TPCA8124 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 8.1 m (typ.) (VGS = -10 V) (3) Low leakage current IDSS

 7.2. Size:240K  toshiba
tpca8125.pdf pdf_icon

TPCA8123

TPCA8125 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCA8125 TPCA8125 TPCA8125 TPCA8125 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Low drain-source on-resistance RDS(ON) = 19.6 m (typ.) (VGS = -10 V) (3) Low leakage current IDSS

 7.3. Size:231K  toshiba
tpca8120.pdf pdf_icon

TPCA8123

TPCA8120 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCA8120 TPCA8120 TPCA8120 TPCA8120 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 2.4 m (typ.) (V

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