Справочник MOSFET. TPCA8123

 

TPCA8123 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPCA8123
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 84 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 163 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 680 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0111 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для TPCA8123

 

 

TPCA8123 Datasheet (PDF)

 ..1. Size:357K  toshiba
 tpca8123.pdf

TPCA8123 TPCA8123

TPCA8123MOSFET PMOS (U-MOS)TPCA8123TPCA8123TPCA8123TPCA81231. 1. 1. 1. 2. 2. 2. 2. (1) , (2) : RDS(ON) = 8.5 m () (VGS = -10 V)(3)

 7.1. Size:240K  toshiba
 tpca8124.pdf

TPCA8123 TPCA8123

TPCA8124MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8124TPCA8124TPCA8124TPCA81241. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 8.1 m (typ.) (VGS = -10 V)(3) Low leakage current: IDSS

 7.2. Size:240K  toshiba
 tpca8125.pdf

TPCA8123 TPCA8123

TPCA8125MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8125TPCA8125TPCA8125TPCA81251. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 19.6 m (typ.) (VGS = -10 V)(3) Low leakage current: IDSS

 7.3. Size:231K  toshiba
 tpca8120.pdf

TPCA8123 TPCA8123

TPCA8120MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8120TPCA8120TPCA8120TPCA81201. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.4 m (typ.) (V

 7.4. Size:238K  toshiba
 tpca8122.pdf

TPCA8123 TPCA8123

TPCA8122MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8122TPCA8122TPCA8122TPCA81221. Applications1. Applications1. Applications1. Applications Motor Drivers Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 3.8 m (typ.) (VGS = -10 V)(3) Low leakage current: IDSS

 7.5. Size:256K  toshiba
 tpca8121.pdf

TPCA8123 TPCA8123

TPCA8121MOSFETs Silicon P-Channel MOS (U-MOS)TPCA8121TPCA8121TPCA8121TPCA81211. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Small, thin package(2) Low drain-source on-resistance: RDS(ON) = 2.4 m (typ.) (VGS = -10 V)(3) Low leakage

 7.6. Size:240K  toshiba
 tpca8128.pdf

TPCA8123 TPCA8123

TPCA8128 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCA8128 Lithium Ion Battery Applications Unit: mmPower Management Switch Applications 1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to compact and slim package Low drain-source ON resistance : RDS (ON) = 3.7 m (typ.) 0.15 0.05 Low leakage current : IDSS = -10 A (max) (

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