TPH1R306PL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPH1R306PL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 170 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 91 nC
Tiempo de subida (tr): 8.3 nS
Conductancia de drenaje-sustrato (Cd): 1160 pF
Resistencia entre drenaje y fuente RDS(on): 0.00134 Ohm
Paquete / Cubierta: SOP8
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TPH1R306PL Datasheet (PDF)
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