TPH1R306PL Todos los transistores

 

TPH1R306PL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPH1R306PL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.3 nS
   Cossⓘ - Capacitancia de salida: 1160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00134 Ohm
   Paquete / Cubierta: SOP8
 

 Búsqueda de reemplazo de TPH1R306PL MOSFET

   - Selección ⓘ de transistores por parámetros

 

TPH1R306PL Datasheet (PDF)

 ..1. Size:674K  toshiba
 tph1r306pl.pdf pdf_icon

TPH1R306PL

TPH1R306PLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH1R306PLTPH1R306PLTPH1R306PLTPH1R306PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 22 nC (typ.)(3) Small out

 9.1. Size:236K  toshiba
 tph1r403nl.pdf pdf_icon

TPH1R306PL

TPH1R403NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH1R403NLTPH1R403NLTPH1R403NLTPH1R403NL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 10.6 nC (typ.)(3) Low drain-source on-resist

 9.2. Size:773K  toshiba
 tph1r712md.pdf pdf_icon

TPH1R306PL

TPH1R712MDMOSFETs Silicon P-Channel MOS (U-MOS)TPH1R712MDTPH1R712MDTPH1R712MDTPH1R712MD1. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.35 m (typ.) (VGS = -4.5 V)(2) Low leakage current: IDS

 9.3. Size:451K  toshiba
 tph1r005pl.pdf pdf_icon

TPH1R306PL

TPH1R005PLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH1R005PLTPH1R005PLTPH1R005PLTPH1R005PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 24 nC (typ.)(3) Small output charge: Qoss =

MOSTRAR MÁS

Otros transistores... T2N7002AK , T2N7002BK , TK290P65Y , TK380P60Y , TK380P65Y , TK750A60F , TPCA8123 , TPH1500CNH , 2SK3878 , TPH1R403NL , TPH1R712MD , TPH2900ENH , TPH2R608NH , TPH3R506PL , TPH3R704PL , TPH3R70APL , TPH4R008NH .

 

 
Back to Top

 


 
.