TPH1R306PL Todos los transistores

 

TPH1R306PL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPH1R306PL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 170 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.3 nS

Cossⓘ - Capacitancia de salida: 1160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00134 Ohm

Encapsulados: SOP8

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TPH1R306PL datasheet

 ..1. Size:674K  toshiba
 tph1r306pl.pdf pdf_icon

TPH1R306PL

TPH1R306PL MOSFETs Silicon N-channel MOS (U-MOS -H) TPH1R306PL TPH1R306PL TPH1R306PL TPH1R306PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 22 nC (typ.) (3) Small out

 9.1. Size:236K  toshiba
 tph1r403nl.pdf pdf_icon

TPH1R306PL

TPH1R403NL MOSFETs Silicon N-channel MOS (U-MOS -H) TPH1R403NL TPH1R403NL TPH1R403NL TPH1R403NL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 10.6 nC (typ.) (3) Low drain-source on-resist

 9.2. Size:773K  toshiba
 tph1r712md.pdf pdf_icon

TPH1R306PL

TPH1R712MD MOSFETs Silicon P-Channel MOS (U-MOS ) TPH1R712MD TPH1R712MD TPH1R712MD TPH1R712MD 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.35 m (typ.) (VGS = -4.5 V) (2) Low leakage current IDS

 9.3. Size:451K  toshiba
 tph1r005pl.pdf pdf_icon

TPH1R306PL

TPH1R005PL MOSFETs Silicon N-channel MOS (U-MOS -H) TPH1R005PL TPH1R005PL TPH1R005PL TPH1R005PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 24 nC (typ.) (3) Small output charge Qoss =

MOSTRAR MÁS

Otros transistores... T2N7002AK , T2N7002BK , TK290P65Y , TK380P60Y , TK380P65Y , TK750A60F , TPCA8123 , TPH1500CNH , 8205A , TPH1R403NL , TPH1R712MD , TPH2900ENH , TPH2R608NH , TPH3R506PL , TPH3R704PL , TPH3R70APL , TPH4R008NH .

 

 

 

 

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