TPH4R008NH Todos los transistores

 

TPH4R008NH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPH4R008NH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 78 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.6 nS
   Cossⓘ - Capacitancia de salida: 890 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: SOP8
 

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TPH4R008NH Datasheet (PDF)

 ..1. Size:234K  toshiba
 tph4r008nh.pdf pdf_icon

TPH4R008NH

TPH4R008NHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R008NHTPH4R008NHTPH4R008NHTPH4R008NH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 18 nC (typ.)(4)

 7.1. Size:235K  toshiba
 tph4r003nl.pdf pdf_icon

TPH4R008NH

TPH4R003NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R003NLTPH4R003NLTPH4R003NLTPH4R003NL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 3.9 nC (typ.)(3) Low drain-source on-resista

 9.1. Size:613K  toshiba
 tph4r10anl.pdf pdf_icon

TPH4R008NH

TPH4R10ANLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R10ANLTPH4R10ANLTPH4R10ANLTPH4R10ANL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge : QSW = 21 nC (typ.)(3) Small ou

 9.2. Size:231K  toshiba
 tph4r50anh.pdf pdf_icon

TPH4R008NH

TPH4R50ANHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R50ANHTPH4R50ANHTPH4R50ANHTPH4R50ANH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 22 nC (typ.)(4)

MOSTRAR MÁS

Otros transistores... TPH1R306PL , TPH1R403NL , TPH1R712MD , TPH2900ENH , TPH2R608NH , TPH3R506PL , TPH3R704PL , TPH3R70APL , K4145 , TPH4R10ANL , TPH8R008NH , TPHR6503PL , TPHR9003NL , TPN11003NL , TPN11006NL , TPN1R603PL , TPN2R203NC .

History: PSMN013-100XS | TK6B60D | HYG110P04LQ2C2 | KP778B | TK80F08K3 | IXTP64N055T | NCEP30T12G

 

 
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