TPH4R008NH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TPH4R008NH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 78 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 59 nC
   trⓘ - Tiempo de subida: 8.6 nS
   Cossⓘ - Capacitancia de salida: 890 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: SOP8

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TPH4R008NH Datasheet (PDF)

..1. Size:234K toshiba
tph4r008nh.pdf

TPH4R008NHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R008NHTPH4R008NHTPH4R008NHTPH4R008NH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 18 nC (typ.)(4)

7.1. Size:235K toshiba
tph4r003nl.pdf

TPH4R003NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R003NLTPH4R003NLTPH4R003NLTPH4R003NL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 3.9 nC (typ.)(3) Low drain-source on-resista

9.1. Size:613K toshiba
tph4r10anl.pdf

TPH4R10ANLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R10ANLTPH4R10ANLTPH4R10ANLTPH4R10ANL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge : QSW = 21 nC (typ.)(3) Small ou

9.2. Size:231K toshiba
tph4r50anh.pdf

TPH4R50ANHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R50ANHTPH4R50ANHTPH4R50ANHTPH4R50ANH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 22 nC (typ.)(4)

9.3. Size:238K toshiba
tph4r606nh.pdf

TPH4R606NHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R606NHTPH4R606NHTPH4R606NHTPH4R606NH1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers DC-DC Converters2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate char

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