TPH4R008NH Todos los transistores

 

TPH4R008NH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPH4R008NH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 78 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.6 nS
   Cossⓘ - Capacitancia de salida: 890 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: SOP8

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TPH4R008NH Datasheet (PDF)

 ..1. Size:234K  toshiba
tph4r008nh.pdf

TPH4R008NH
TPH4R008NH

TPH4R008NHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R008NHTPH4R008NHTPH4R008NHTPH4R008NH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 18 nC (typ.)(4)

 7.1. Size:235K  toshiba
tph4r003nl.pdf

TPH4R008NH
TPH4R008NH

TPH4R003NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R003NLTPH4R003NLTPH4R003NLTPH4R003NL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 3.9 nC (typ.)(3) Low drain-source on-resista

 9.1. Size:613K  toshiba
tph4r10anl.pdf

TPH4R008NH
TPH4R008NH

TPH4R10ANLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R10ANLTPH4R10ANLTPH4R10ANLTPH4R10ANL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge : QSW = 21 nC (typ.)(3) Small ou

 9.2. Size:231K  toshiba
tph4r50anh.pdf

TPH4R008NH
TPH4R008NH

TPH4R50ANHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R50ANHTPH4R50ANHTPH4R50ANHTPH4R50ANH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 22 nC (typ.)(4)

 9.3. Size:238K  toshiba
tph4r606nh.pdf

TPH4R008NH
TPH4R008NH

TPH4R606NHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R606NHTPH4R606NHTPH4R606NHTPH4R606NH1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers DC-DC Converters2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate char

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AOD5T40P | YSK038N010T1A

 

 
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History: AOD5T40P | YSK038N010T1A

TPH4R008NH
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