Справочник MOSFET. TPH4R008NH

 

TPH4R008NH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPH4R008NH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 78 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 59 nC
   trⓘ - Время нарастания: 8.6 ns
   Cossⓘ - Выходная емкость: 890 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для TPH4R008NH

 

 

TPH4R008NH Datasheet (PDF)

 ..1. Size:234K  toshiba
 tph4r008nh.pdf

TPH4R008NH TPH4R008NH

TPH4R008NHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R008NHTPH4R008NHTPH4R008NHTPH4R008NH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 18 nC (typ.)(4)

 7.1. Size:235K  toshiba
 tph4r003nl.pdf

TPH4R008NH TPH4R008NH

TPH4R003NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R003NLTPH4R003NLTPH4R003NLTPH4R003NL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 3.9 nC (typ.)(3) Low drain-source on-resista

 9.1. Size:613K  toshiba
 tph4r10anl.pdf

TPH4R008NH TPH4R008NH

TPH4R10ANLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R10ANLTPH4R10ANLTPH4R10ANLTPH4R10ANL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge : QSW = 21 nC (typ.)(3) Small ou

 9.2. Size:231K  toshiba
 tph4r50anh.pdf

TPH4R008NH TPH4R008NH

TPH4R50ANHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R50ANHTPH4R50ANHTPH4R50ANHTPH4R50ANH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 22 nC (typ.)(4)

 9.3. Size:238K  toshiba
 tph4r606nh.pdf

TPH4R008NH TPH4R008NH

TPH4R606NHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH4R606NHTPH4R606NHTPH4R606NHTPH4R606NH1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers DC-DC Converters2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate char

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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