TPH8R008NH Todos los transistores

 

TPH8R008NH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPH8R008NH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 61 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 63 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 520 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: SOP8
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TPH8R008NH Datasheet (PDF)

 ..1. Size:234K  toshiba
 tph8r008nh.pdf pdf_icon

TPH8R008NH

TPH8R008NHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH8R008NHTPH8R008NHTPH8R008NHTPH8R008NH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 13 nC (typ.)(4)

 9.1. Size:235K  toshiba
 tph8r80anh.pdf pdf_icon

TPH8R008NH

TPH8R80ANHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH8R80ANHTPH8R80ANHTPH8R80ANHTPH8R80ANH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 13 nC (typ.)(4)

 9.2. Size:238K  toshiba
 tph8r903nl.pdf pdf_icon

TPH8R008NH

TPH8R903NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH8R903NLTPH8R903NLTPH8R903NLTPH8R903NL1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 2.5 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 1

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History: NTB6410AN | SDF1NA60

 

 
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