TPH8R008NH MOSFET. Datasheet pdf. Equivalent
Type Designator: TPH8R008NH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 61 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 63 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 35 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 520 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: SOP8
TPH8R008NH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPH8R008NH Datasheet (PDF)
tph8r008nh.pdf
TPH8R008NHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH8R008NHTPH8R008NHTPH8R008NHTPH8R008NH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 13 nC (typ.)(4)
tph8r80anh.pdf
TPH8R80ANHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH8R80ANHTPH8R80ANHTPH8R80ANHTPH8R80ANH1. Applications1. Applications1. Applications1. Applications DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 13 nC (typ.)(4)
tph8r903nl.pdf
TPH8R903NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPH8R903NLTPH8R903NLTPH8R903NLTPH8R903NL1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 2.5 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 1
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
