TPN2R203NC Todos los transistores

 

TPN2R203NC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPN2R203NC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 650 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
   Paquete / Cubierta: TSON8
 

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TPN2R203NC Datasheet (PDF)

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TPN2R203NC

TPN2R203NCMOSFETs Silicon N-channel MOS (U-MOS)TPN2R203NCTPN2R203NCTPN2R203NCTPN2R203NC1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 30 V)(3) Enhan

 9.1. Size:242K  toshiba
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TPN2R203NC

TPN2R503NCMOSFETs Silicon N-channel MOS (U-MOS)TPN2R503NCTPN2R503NCTPN2R503NCTPN2R503NC1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.1 m (typ.) (VGS = 10 V)(3) Low leakage

 9.2. Size:234K  toshiba
 tpn2r703nl.pdf pdf_icon

TPN2R203NC

TPN2R703NLMOSFETs Silicon N-channel MOS (U-MOS-H)TPN2R703NLTPN2R703NLTPN2R703NLTPN2R703NL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 5.2 nC (typ.)(3) Low drain-source on-resista

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History: SI7388DP | FDD6296 | MTEF1P15AV8 | SD10425 | IRFHM830TRPBF | IRFR2905Z

 

 
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