WSD2054DN22 Todos los transistores

 

WSD2054DN22 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WSD2054DN22
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 29.6 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: DFN2X2-6L
     - Selección de transistores por parámetros

 

WSD2054DN22 Datasheet (PDF)

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WSD2054DN22

WSD2054DN22 Dual N-Ch MOSFETGeneral Description Product SummeryThe WSD2054DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 5A20V 50mgate charge for most of the small power switching and load switch applications. Applications The WSD2054DN22 meet the RoHS and Green Product requirement

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WSD2054DN22

WSD2050DNN-Ch MOSFETGeneral Description Product SummeryThe WSD2050DN is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 8.2m 20V 40A gate charge for most of the synchronous buck converter applications . Applications The WSD2050DN meet the RoHS and Green Product requirement , 100% EAS Hi

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wsd2018adn22.pdf pdf_icon

WSD2054DN22

WSD2018ADN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018ADN22 is the highestBVDSS RDSON ID performance trench N-Ch MOSFET withextreme high cell density , which provide20V 9.5m 11Aexcellent RDSON and gate charge for most ofthe small power switching and load switchApplications applications.The WSD2018ADN22 meet the RoHS and High Frequency Point-of-Load S

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wsd20l120dn56.pdf pdf_icon

WSD2054DN22

WSD20L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD20L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -20V 2.1m -120Acharge for most of the synchronous buck converter applications . Applications The WSD20L120DN56 meet the RoHS and High Frequency Point-of-Load Sy

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History: DMN2020LSN | TPA65R180D | SQ4532AEY | STP60NF06LFP | FDB0260N1007L | IRLI3803PBF

 

 
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