WSD2054DN22 Todos los transistores

 

WSD2054DN22 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WSD2054DN22

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29.6 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: DFN2X2-6L

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WSD2054DN22 datasheet

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wsd2054dn22.pdf pdf_icon

WSD2054DN22

WSD2054DN22 Dual N-Ch MOSFET General Description Product Summery The WSD2054DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 5A 20V 50m gate charge for most of the small power switching and load switch applications. Applications The WSD2054DN22 meet the RoHS and Green Product requirement

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wsd2050dn.pdf pdf_icon

WSD2054DN22

WSD2050DN N-Ch MOSFET General Description Product Summery The WSD2050DN is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 8.2m 20V 40A gate charge for most of the synchronous buck converter applications . Applications The WSD2050DN meet the RoHS and Green Product requirement , 100% EAS Hi

 9.1. Size:1808K  winsok
wsd2018adn22.pdf pdf_icon

WSD2054DN22

WSD2018ADN22 N-Ch MOSFET General Description Product Summery The WSD2018ADN22 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 20V 9.5m 11A excellent RDSON and gate charge for most of the small power switching and load switch Applications applications. The WSD2018ADN22 meet the RoHS and High Frequency Point-of-Load S

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wsd20l120dn56.pdf pdf_icon

WSD2054DN22

WSD20L120DN56 P-Ch MOSFET General Description Product Summery The WSD20L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -20V 2.1m -120A charge for most of the synchronous buck converter applications . Applications The WSD20L120DN56 meet the RoHS and High Frequency Point-of-Load Sy

Otros transistores... WSD1216DN22 , WSD14N10DNG , WSD1614DN , WSD2012DN25 , WSD2018ADN22 , WSD2018BDN22 , WSD2018DN22 , WSD2050DN , BS170 , WSD2068 , WSD2075DN , WSD2090DN56 , WSD2098 , WSD20L120DN56 , WSD20L50DN , WSD20L70DN , WSD20L75DN .

History: SI2303 | VS3622DP2 | WMK11N80M3 | WMM13N65EM | 5N20A | WMJ26N60C4 | WMJ12N105C2

 

 

 

 

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