WSD2054DN22 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSD2054DN22
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.4 nC
trⓘ - Rise Time: 29.6 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: DFN2X2-6L
WSD2054DN22 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSD2054DN22 Datasheet (PDF)
wsd2054dn22.pdf
WSD2054DN22 Dual N-Ch MOSFETGeneral Description Product SummeryThe WSD2054DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 5A20V 50mgate charge for most of the small power switching and load switch applications. Applications The WSD2054DN22 meet the RoHS and Green Product requirement
wsd2050dn.pdf
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wsd2018adn22.pdf
WSD2018ADN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018ADN22 is the highestBVDSS RDSON ID performance trench N-Ch MOSFET withextreme high cell density , which provide20V 9.5m 11Aexcellent RDSON and gate charge for most ofthe small power switching and load switchApplications applications.The WSD2018ADN22 meet the RoHS and High Frequency Point-of-Load S
wsd20l120dn56.pdf
WSD20L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD20L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -20V 2.1m -120Acharge for most of the synchronous buck converter applications . Applications The WSD20L120DN56 meet the RoHS and High Frequency Point-of-Load Sy
wsd2018dn22.pdf
WSD2018DN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 15m(MAX) 12Agate charge for most of the small power switching and load switch applications. Applications The WSD2018DN22 meet the RoHS and Green Product requirement
wsd2068.pdf
WSD2068Dual N-Ch MOSFETGeneral Description Product SummeryThe WSD2068 is the highest performance trench RDSON BVDSS ID N-ch MOSFETs with extreme high cell density , 15.5m 7.5Awhich provide excellent RDSON and gate 20Vcharge for most of the small power switching and load switch applications. Applications The WSD2068 meet the RoHS and Green Power Management in Noteb
wsd2090dn56.pdf
WSD2090DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD2090DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 2.8m 80Agate charge for most of the synchronous buck converter applications . Applications The WSD2090DN56 meet the RoHS and Green Product requirement 100% EAS guar
wsd20l70dn.pdf
WSD20L70DNP-Ch MOSFETGeneral Description Product SummeryThe WSD20L70DN is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -20V 6.7m -70Agate charge for most of the synchronous buck converter applications . Applications The WSD20L70DN meet the RoHS and Green Product requirement 100% EAS gu
wsd20l75dn.pdf
WSD20L75DNP-Ch MOSFET Product SummeryGeneral Description Description The WSD20L75DN uses advanced BVDSS RDSON ID trench technology and design to provide excellent RDS(ON) with low gate charge. It can be -20V 4.8m -75Aused in a wide variety of applications. Applications Load switch Features Battery protection High density cell design for ultra low RdsonDFN3X
wsd20l50dn.pdf
WSD20L50DNP-Ch MOSFETGeneral Description Product SummeryThe WSD20L50DN is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and -20V 9.0m -50Agate charge for most of the synchronous buck converter applications . Applications The WSD20L50DN meet the RoHS and Green Product requirement 100% EAS
wsd2075dn.pdf
WSD2075DNDual P-Ch MOSFET Product SummeryGeneral Description The WSD2075DN is the highest performance BVDSS RDSON ID trench Dual P-ch MOSFETs with extreme high cell density , which provide excellent RDSON -20V 9.5m -36Aand gate charge for most of the synchronous buck converter applications . Applications The WSD2075DN meet the RoHS and Green Product requirement 100%
wsd2012dn25.pdf
WSD2012DN25N-Ch MOSFETGeneral Description Product SummeryThe WSD2012DN25 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell 9.5m(max)density , which provide excellent RDSON and gate 20V 11Acharge for most of the small power switching and load switch applications. Applications The WSD2012DN25 meet the RoHS and Green Power management
wsd2098.pdf
WSD2098Dual N-Ch MOSFETGeneral Description Product SummeryThe WSD2098 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , 7.0mwhich provide excellent RDSON and gate charge 20V 9.7Afor most of the small power switching and load switch applications. Applications The WSD2098 meet the RoHS and Green Power Management in Notebook
wsd2018bdn22.pdf
WSD2018BDN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018BDN22 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 12V 11.5m(MAX) 12.3Aexcellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSD2018BDN22 meet the RoHS and Green Product req
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: APT58M50JCU2
History: APT58M50JCU2
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