WSD2068 Todos los transistores

 

WSD2068 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WSD2068
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 277 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0155 Ohm
   Paquete / Cubierta: DFN2X3A-EP
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WSD2068 Datasheet (PDF)

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WSD2068

WSD2068Dual N-Ch MOSFETGeneral Description Product SummeryThe WSD2068 is the highest performance trench RDSON BVDSS ID N-ch MOSFETs with extreme high cell density , 15.5m 7.5Awhich provide excellent RDSON and gate 20Vcharge for most of the small power switching and load switch applications. Applications The WSD2068 meet the RoHS and Green Power Management in Noteb

 9.1. Size:1808K  winsok
wsd2018adn22.pdf pdf_icon

WSD2068

WSD2018ADN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018ADN22 is the highestBVDSS RDSON ID performance trench N-Ch MOSFET withextreme high cell density , which provide20V 9.5m 11Aexcellent RDSON and gate charge for most ofthe small power switching and load switchApplications applications.The WSD2018ADN22 meet the RoHS and High Frequency Point-of-Load S

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wsd20l120dn56.pdf pdf_icon

WSD2068

WSD20L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD20L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -20V 2.1m -120Acharge for most of the synchronous buck converter applications . Applications The WSD20L120DN56 meet the RoHS and High Frequency Point-of-Load Sy

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WSD2068

WSD2018DN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 15m(MAX) 12Agate charge for most of the small power switching and load switch applications. Applications The WSD2018DN22 meet the RoHS and Green Product requirement

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History: STD1NA60T4 | 2SK3272-01SJ

 

 
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