All MOSFET. WSD2068 Datasheet

 

WSD2068 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSD2068
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 277 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
   Package: DFN2X3A-EP

 WSD2068 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSD2068 Datasheet (PDF)

 ..1. Size:729K  winsok
wsd2068.pdf

WSD2068
WSD2068

WSD2068Dual N-Ch MOSFETGeneral Description Product SummeryThe WSD2068 is the highest performance trench RDSON BVDSS ID N-ch MOSFETs with extreme high cell density , 15.5m 7.5Awhich provide excellent RDSON and gate 20Vcharge for most of the small power switching and load switch applications. Applications The WSD2068 meet the RoHS and Green Power Management in Noteb

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wsd2018adn22.pdf

WSD2068
WSD2068

WSD2018ADN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018ADN22 is the highestBVDSS RDSON ID performance trench N-Ch MOSFET withextreme high cell density , which provide20V 9.5m 11Aexcellent RDSON and gate charge for most ofthe small power switching and load switchApplications applications.The WSD2018ADN22 meet the RoHS and High Frequency Point-of-Load S

 9.2. Size:1030K  winsok
wsd20l120dn56.pdf

WSD2068
WSD2068

WSD20L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD20L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -20V 2.1m -120Acharge for most of the synchronous buck converter applications . Applications The WSD20L120DN56 meet the RoHS and High Frequency Point-of-Load Sy

 9.3. Size:2643K  winsok
wsd2018dn22.pdf

WSD2068
WSD2068

WSD2018DN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 15m(MAX) 12Agate charge for most of the small power switching and load switch applications. Applications The WSD2018DN22 meet the RoHS and Green Product requirement

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wsd2054dn22.pdf

WSD2068
WSD2068

WSD2054DN22 Dual N-Ch MOSFETGeneral Description Product SummeryThe WSD2054DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 5A20V 50mgate charge for most of the small power switching and load switch applications. Applications The WSD2054DN22 meet the RoHS and Green Product requirement

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wsd2090dn56.pdf

WSD2068
WSD2068

WSD2090DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD2090DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 2.8m 80Agate charge for most of the synchronous buck converter applications . Applications The WSD2090DN56 meet the RoHS and Green Product requirement 100% EAS guar

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wsd20l70dn.pdf

WSD2068
WSD2068

WSD20L70DNP-Ch MOSFETGeneral Description Product SummeryThe WSD20L70DN is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -20V 6.7m -70Agate charge for most of the synchronous buck converter applications . Applications The WSD20L70DN meet the RoHS and Green Product requirement 100% EAS gu

 9.7. Size:789K  winsok
wsd20l75dn.pdf

WSD2068
WSD2068

WSD20L75DNP-Ch MOSFET Product SummeryGeneral Description Description The WSD20L75DN uses advanced BVDSS RDSON ID trench technology and design to provide excellent RDS(ON) with low gate charge. It can be -20V 4.8m -75Aused in a wide variety of applications. Applications Load switch Features Battery protection High density cell design for ultra low RdsonDFN3X

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wsd20l50dn.pdf

WSD2068
WSD2068

WSD20L50DNP-Ch MOSFETGeneral Description Product SummeryThe WSD20L50DN is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and -20V 9.0m -50Agate charge for most of the synchronous buck converter applications . Applications The WSD20L50DN meet the RoHS and Green Product requirement 100% EAS

 9.9. Size:2306K  winsok
wsd2075dn.pdf

WSD2068
WSD2068

WSD2075DNDual P-Ch MOSFET Product SummeryGeneral Description The WSD2075DN is the highest performance BVDSS RDSON ID trench Dual P-ch MOSFETs with extreme high cell density , which provide excellent RDSON -20V 9.5m -36Aand gate charge for most of the synchronous buck converter applications . Applications The WSD2075DN meet the RoHS and Green Product requirement 100%

 9.10. Size:1316K  winsok
wsd2012dn25.pdf

WSD2068
WSD2068

WSD2012DN25N-Ch MOSFETGeneral Description Product SummeryThe WSD2012DN25 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell 9.5m(max)density , which provide excellent RDSON and gate 20V 11Acharge for most of the small power switching and load switch applications. Applications The WSD2012DN25 meet the RoHS and Green Power management

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wsd2050dn.pdf

WSD2068
WSD2068

WSD2050DNN-Ch MOSFETGeneral Description Product SummeryThe WSD2050DN is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 8.2m 20V 40A gate charge for most of the synchronous buck converter applications . Applications The WSD2050DN meet the RoHS and Green Product requirement , 100% EAS Hi

 9.12. Size:691K  winsok
wsd2098.pdf

WSD2068
WSD2068

WSD2098Dual N-Ch MOSFETGeneral Description Product SummeryThe WSD2098 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , 7.0mwhich provide excellent RDSON and gate charge 20V 9.7Afor most of the small power switching and load switch applications. Applications The WSD2098 meet the RoHS and Green Power Management in Notebook

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wsd2018bdn22.pdf

WSD2068
WSD2068

WSD2018BDN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018BDN22 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 12V 11.5m(MAX) 12.3Aexcellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSD2018BDN22 meet the RoHS and Green Product req

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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