WSD3030DN Todos los transistores

 

WSD3030DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WSD3030DN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 34 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: DFN3.3X3.3-8L
 

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WSD3030DN Datasheet (PDF)

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WSD3030DN

WSD3030DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3030DN is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 10m 34Agate charge for most of the synchronous buck converter applications . Applications The WSD3030DN meet the RoHS and Green High Frequency Point-of-Load Synchronous

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wsd30l20dn.pdf pdf_icon

WSD3030DN

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

 9.2. Size:4767K  winsok
wsd3067dn56.pdf pdf_icon

WSD3030DN

WSD3067DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24ARDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8AThe WSD3067 meet the RoHS and Green Application

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wsd3023dn56.pdf pdf_icon

WSD3030DN

WSD3023DN56 N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 30V 14m 14ARDSON and gate charge for most of the -12A-30V 23msynchronous buck converter applications . The WSD3023DN56 meet the RoHS and Applicatio

Otros transistores... WSD20L75DN , WSD30100DN56 , WSD30140DN56 , WSD30150DN56 , WSD30160DN56 , WSD3020DN , WSD3023DN56 , WSD3028DN , IRF830 , WSD3042DN56 , WSD3045DN , WSD3050DN , WSD3056DN , WSD3066DN , WSD3067DN56 , WSD3069DN56 , WSD3070DN .

History: SI7159DP | NDT90N03 | NTTFS5D1N06HL | SFP026N30BC3 | WSD30L90DN56 | NCEP1580 | WNMD2162

 

 
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