Справочник MOSFET. WSD3030DN

 

WSD3030DN Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WSD3030DN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 34 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: DFN3.3X3.3-8L
     - подбор MOSFET транзистора по параметрам

 

WSD3030DN Datasheet (PDF)

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WSD3030DN

WSD3030DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3030DN is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 10m 34Agate charge for most of the synchronous buck converter applications . Applications The WSD3030DN meet the RoHS and Green High Frequency Point-of-Load Synchronous

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wsd30l20dn.pdfpdf_icon

WSD3030DN

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

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wsd3067dn56.pdfpdf_icon

WSD3030DN

WSD3067DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24ARDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8AThe WSD3067 meet the RoHS and Green Application

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wsd3023dn56.pdfpdf_icon

WSD3030DN

WSD3023DN56 N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 30V 14m 14ARDSON and gate charge for most of the -12A-30V 23msynchronous buck converter applications . The WSD3023DN56 meet the RoHS and Applicatio

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History: SVT034R0NL5 | AP2306CGN-HF | SL9N150T | IXFX38N80Q2 | SIHFIB6N60A | NTR4501NT1 | FX50SMJ-06

 

 
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