Справочник MOSFET. WSD3030DN

 

WSD3030DN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WSD3030DN
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 25 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 34 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 6.1 nC
   Время нарастания (tr): 10 ns
   Выходная емкость (Cd): 130 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm
   Тип корпуса: DFN3.3X3.3-8L

 Аналог (замена) для WSD3030DN

 

 

WSD3030DN Datasheet (PDF)

 ..1. Size:905K  winsok
wsd3030dn.pdf

WSD3030DN
WSD3030DN

WSD3030DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3030DN is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 10m 34Agate charge for most of the synchronous buck converter applications . Applications The WSD3030DN meet the RoHS and Green High Frequency Point-of-Load Synchronous

 9.1. Size:1410K  winsok
wsd30l20dn.pdf

WSD3030DN
WSD3030DN

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

 9.2. Size:4767K  winsok
wsd3067dn56.pdf

WSD3030DN
WSD3030DN

WSD3067DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24ARDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8AThe WSD3067 meet the RoHS and Green Application

 9.3. Size:2847K  winsok
wsd3023dn56.pdf

WSD3030DN
WSD3030DN

WSD3023DN56 N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 30V 14m 14ARDSON and gate charge for most of the -12A-30V 23msynchronous buck converter applications . The WSD3023DN56 meet the RoHS and Applicatio

 9.4. Size:870K  winsok
wsd3028dn.pdf

WSD3030DN
WSD3030DN

WSD3028DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3028DN is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and 30V 25m 19Agate charge for most of the synchronous buck converter applications . Applications The WSD3028DN meet the RoHS and High Frequency Point-of-Load Synchronous Gree

 9.5. Size:611K  winsok
wsd30l90dn56.pdf

WSD3030DN
WSD3030DN

WSD30L90DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD30L90DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 6.4m -90Acharge for most of the synchronous buck converter applications . Applications The WSD30L90DN56 meet the RoHS and Green High Frequency Point-of-Load

 9.6. Size:2118K  winsok
wsd3075dn56.pdf

WSD3030DN
WSD3030DN

WSD3075DN56N-Ch MOSFETGeneral Description Product SummeryThe WSD3075DN56 is the highest performance BVDSS RDSON IDtrench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 6.5m 75Agate charge for most of the synchronous buck converter applications . The WSD3075DN56 meet the RoHS and Green Applications Product requirement 100% EAS guar

 9.7. Size:625K  winsok
wsd3066dn.pdf

WSD3030DN
WSD3030DN

WSD3066DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3066DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which provide 30V 5.5m 45Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD3066DN meet the RoHS and High Frequency Point-of-Load Synchronous

 9.8. Size:1045K  winsok
wsd30100dn56.pdf

WSD3030DN
WSD3030DN

WSD30100DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD30100DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 3.3m 100Agate charge for most of the synchronous buck converter applications . Applications The WSD30100DN56 meet the RoHS and Green Product requirement 100% EAS

 9.9. Size:595K  winsok
wsd3070dn.pdf

WSD3030DN
WSD3030DN

WSD3070DNN-Ch MOSFETFeatures Product Summery 100% UIS + R Testedg BVDSS RDSON ID Avalanche Rated25V 3.4m(max.) 70A Reliable an d Rugged Lead Fre e an d Green Devices AvailableDFN3.3x3.3-8-EP Pin Configuration (RoHS Complia nt)Applications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.Absolute Maximum Ratings (TA = 25C Unl

 9.10. Size:1066K  winsok
wsd3020dn.pdf

WSD3030DN
WSD3030DN

WSD3020DNDual N-Ch MOSFETGeneral Description Product SummeryThe WSD3020DN is the highest performance BVDSS RDSON ID trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON 30V 17m 21Aand gate charge for most of the synchronous buck converter applications . Applications The WSD3020DN meet the RoHS and High Frequency Point-of-Load Synchron

 9.11. Size:1390K  winsok
wsd3056dn.pdf

WSD3030DN
WSD3030DN

WSD3056DNDual N-Ch MOSFETProduct SummeryGeneral Description BVDSS RDSON ID30V 13m 35AThe WSD3056DN is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .Applications POL Applications MB / VGA / VcoreThe WSD3056DN meet the RoHS and Gre

 9.12. Size:598K  winsok
wsd3042dn56.pdf

WSD3030DN
WSD3030DN

WSD3042DN56 N-Ch MOSFETFeatures Pin Description 30V/40A,RDS(ON)= 10.8m (max.) @ VGS=10V RDS(ON)= 12m (max.) @ VGS=4.5V RDS(ON)= 16m (max.) @ VGS=2.5V 100% UIS+Rg tested Reliable and RuggedDFN5x6A-8_EP Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management in Notebook Computer,Portable Equipment and Battery Powered Systems.

 9.13. Size:2165K  winsok
wsd3095dn56.pdf

WSD3030DN
WSD3030DN

WSD3095DN56N-Channel MOSFETGeneral Description Product SummeryThe WSD3095DN56 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 95A30V 3.5mcharge for most of the synchronous buck converter applications . The WSD3095DN56 meet the RoHS and Green Applications Product requirement 100% E

 9.14. Size:919K  winsok
wsd30l120dn56.pdf

WSD3030DN
WSD3030DN

WSD30L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD30L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 3.6m -120Acharge for most of the synchronous buck converter applications . Applications The WSD30L120DN56 meet the RoHS and Green High Frequency Point-of-L

 9.15. Size:821K  winsok
wsd30l30dn.pdf

WSD3030DN
WSD3030DN

WSD30L30DNP-Ch MOSFETGeneral Description Product SummeryThe WSD30L30DN is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 15m -32Agate charge for most of the synchronous buck converter applications . Applications The WSD30L30DN meet the RoHS and Green Product requirement , 100% EAS guara

 9.16. Size:3084K  winsok
wsd3069dn56.pdf

WSD3030DN
WSD3030DN

WSD3069DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3069DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and 16A30V 15mgate charge for most of the synchronous buck converter applications . -30V 15m -16AThe WSD3069DN56 meet the RoHS and Green Applic

 9.17. Size:733K  winsok
wsd30l60dn56.pdf

WSD3030DN
WSD3030DN

WSD30L60DN56P-Ch MOSFET Product SummeryFeatures -30V/-45A,RDS(ON) = 12m (max.) @ VGS =-10VRDS(ON) = 17m (max.) @ VGS =-6VRDS(ON) = 21m (max.) @ VGS =-4.5V Reliable and Rugged Lead Free and Green Devices AvailableDFN5X6A-8_EP (RoHS Compliant)Applications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.Absolute Maximum Ratings (T

 9.18. Size:788K  winsok
wsd3050dn.pdf

WSD3030DN
WSD3030DN

WSD3050DNN-Ch MOSFETGeneral Description Product SummeryThe WSD3050DN is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 7m 30V 50A gate charge for most of the synchronous buck converter applications . Applications The WSD3050DN meet the RoHS and Green Product requirement , 100% EAS guarante

 9.19. Size:1429K  winsok
wsd30160dn56.pdf

WSD3030DN
WSD3030DN

WSD30160DN56 N-Ch MOSFETProduct SummeryGeneral Description The WSD30160DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high celldensity ,which provide excellent RDSON and gate 30V 1.9m 120Acharge for most of the synchronous buck converter applications . Applications The WSD30160DN56 meet the RoHS and Green Product requirement , 100% EA

 9.20. Size:834K  winsok
wsd3045dn.pdf

WSD3030DN
WSD3030DN

WSD3045DNN-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3045DN is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 10.5m30V 18ARDSON and gate charge for most of the synchronous buck converter applications . -15.3A-30V 24mThe WSD3045DN meet the RoHS and Green Product

 9.21. Size:867K  winsok
wsd30140dn56.pdf

WSD3030DN
WSD3030DN

WSD30140DN56 N-Ch MOSFETProduct SummeryGeneral Description The WSD30140DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high celldensity ,which provide excellent RDSON and gate 30V 1.7m 85Acharge for most of the synchronous buck converter applications . Applications The WSD30140DN56 meet the RoHS and Green Product requirement , 100% EAS

 9.22. Size:801K  winsok
wsd30l40dn.pdf

WSD3030DN
WSD3030DN

WSD30L40DNP-Ch MOSFETGeneral Description Product SummeryThe WSD30L40DN is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -30V 11m -40Agate charge for most of the synchronous buck converter applications . Applications The WSD30L40DN meet the RoHS and Green Product requirement 100% EAS gua

 9.23. Size:1074K  winsok
wsd30150dn56.pdf

WSD3030DN
WSD3030DN

WSD30150DN56 N-Ch MOSFETProduct SummeryGeneral Description The WSD30150DN56 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high celldensity ,which provide excellent RDSON and gate charge for most of 30V 1.8m 150Athe synchronous buck converter applications . Applications The WSD30150DN56 meet the RoHS and Green Product requirement , 100% EAS

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