WSD3045DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSD3045DN
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 40 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
Paquete / Cubierta: DFN3.3X3.3-8-EP1
Búsqueda de reemplazo de MOSFET WSD3045DN
WSD3045DN Datasheet (PDF)
wsd3045dn.pdf
WSD3045DNN-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3045DN is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 10.5m30V 18ARDSON and gate charge for most of the synchronous buck converter applications . -15.3A-30V 24mThe WSD3045DN meet the RoHS and Green Product
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wsd30l20dn.pdf
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wsd30l90dn56.pdf
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wsd3020dn.pdf
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wsd3056dn.pdf
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wsd30l120dn56.pdf
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wsd30l30dn.pdf
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wsd30l60dn56.pdf
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wsd3050dn.pdf
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wsd30140dn56.pdf
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wsd30l40dn.pdf
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wsd30150dn56.pdf
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