WSD3045DN Todos los transistores

 

WSD3045DN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WSD3045DN

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm

Encapsulados: DFN3.3X3.3-8-EP1

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WSD3045DN datasheet

 ..1. Size:834K  winsok
wsd3045dn.pdf pdf_icon

WSD3045DN

WSD3045DN N-Ch and P-Channel MOSFET General Description Product Summery The WSD3045DN is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 10.5m 30V 18A RDSON and gate charge for most of the synchronous buck converter applications . -15.3A -30V 24m The WSD3045DN meet the RoHS and Green Product

 8.1. Size:598K  winsok
wsd3042dn56.pdf pdf_icon

WSD3045DN

WSD3042DN56 N-Ch MOSFET Features Pin Description 30V/40A, RDS(ON)= 10.8m (max.) @ VGS=10V RDS(ON)= 12m (max.) @ VGS=4.5V RDS(ON)= 16m (max.) @ VGS=2.5V 100% UIS+Rg tested Reliable and Rugged DFN5x6A-8_EP Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.

 9.1. Size:1410K  winsok
wsd30l20dn.pdf pdf_icon

WSD3045DN

WSD30L20DN P-Ch MOSFET Product Summery Description The WSD30L20DN uses advanced trench technology to VDS RDS(ON) ID provide excellent RDS(ON), low gate charge and -30 18m -20A operation with gate voltages as low as 4.5V.This device Application is suitable for use as a Battery protection or in other Lithium battery protection Switching application Wireless impact Mobile phone fast

 9.2. Size:4767K  winsok
wsd3067dn56.pdf pdf_icon

WSD3045DN

WSD3067DN56 N-Ch and P-Channel MOSFET General Description Product Summery The WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24A RDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8A The WSD3067 meet the RoHS and Green Application

Otros transistores... WSD30140DN56 , WSD30150DN56 , WSD30160DN56 , WSD3020DN , WSD3023DN56 , WSD3028DN , WSD3030DN , WSD3042DN56 , P60NF06 , WSD3050DN , WSD3056DN , WSD3066DN , WSD3067DN56 , WSD3069DN56 , WSD3070DN , WSD3075DN56 , WSD3095DN56 .

History: WMK10N70C4 | VP0300M | BLM7002K | 2SK1647S | BLM2302 | WMK14N70C4 | VBZM8N50

 

 

 

 

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