Справочник MOSFET. WSD3045DN

 

WSD3045DN Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WSD3045DN
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0105 Ohm
   Тип корпуса: DFN3.3X3.3-8-EP1
     - подбор MOSFET транзистора по параметрам

 

WSD3045DN Datasheet (PDF)

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wsd3045dn.pdfpdf_icon

WSD3045DN

WSD3045DNN-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3045DN is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent 10.5m30V 18ARDSON and gate charge for most of the synchronous buck converter applications . -15.3A-30V 24mThe WSD3045DN meet the RoHS and Green Product

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wsd3042dn56.pdfpdf_icon

WSD3045DN

WSD3042DN56 N-Ch MOSFETFeatures Pin Description 30V/40A,RDS(ON)= 10.8m (max.) @ VGS=10V RDS(ON)= 12m (max.) @ VGS=4.5V RDS(ON)= 16m (max.) @ VGS=2.5V 100% UIS+Rg tested Reliable and RuggedDFN5x6A-8_EP Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management in Notebook Computer,Portable Equipment and Battery Powered Systems.

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wsd30l20dn.pdfpdf_icon

WSD3045DN

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

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wsd3067dn56.pdfpdf_icon

WSD3045DN

WSD3067DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24ARDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8AThe WSD3067 meet the RoHS and Green Application

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: DMP21D2UFA | GWM120-0075X1-SMD | PE548EA | IRF6619 | WMO099N10LGS | 17P10L-TA3-T | BRCS250N03DMF

 

 
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