WSD3070DN Todos los transistores

 

WSD3070DN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WSD3070DN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 62.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12.2 nS

Cossⓘ - Capacitancia de salida: 510 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm

Encapsulados: DFN3.3X3.3-8-EP

 Búsqueda de reemplazo de WSD3070DN MOSFET

- Selecciónⓘ de transistores por parámetros

 

WSD3070DN datasheet

 ..1. Size:595K  winsok
wsd3070dn.pdf pdf_icon

WSD3070DN

WSD3070DN N-Ch MOSFET Features Product Summery 100% UIS + R Tested g BVDSS RDSON ID Avalanche Rated 25V 3.4m (max.) 70A Reliable an d Rugged Lead Fre e an d Green Devices Available DFN3.3x3.3-8-EP Pin Configuration (RoHS Complia nt) Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings (TA = 25 C Unl

 8.1. Size:2118K  winsok
wsd3075dn56.pdf pdf_icon

WSD3070DN

WSD3075DN56 N-Ch MOSFET General Description Product Summery The WSD3075DN56 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 6.5m 75A gate charge for most of the synchronous buck converter applications . The WSD3075DN56 meet the RoHS and Green Applications Product requirement 100% EAS guar

 9.1. Size:1410K  winsok
wsd30l20dn.pdf pdf_icon

WSD3070DN

WSD30L20DN P-Ch MOSFET Product Summery Description The WSD30L20DN uses advanced trench technology to VDS RDS(ON) ID provide excellent RDS(ON), low gate charge and -30 18m -20A operation with gate voltages as low as 4.5V.This device Application is suitable for use as a Battery protection or in other Lithium battery protection Switching application Wireless impact Mobile phone fast

 9.2. Size:4767K  winsok
wsd3067dn56.pdf pdf_icon

WSD3070DN

WSD3067DN56 N-Ch and P-Channel MOSFET General Description Product Summery The WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24A RDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8A The WSD3067 meet the RoHS and Green Application

Otros transistores... WSD3030DN , WSD3042DN56 , WSD3045DN , WSD3050DN , WSD3056DN , WSD3066DN , WSD3067DN56 , WSD3069DN56 , 7N60 , WSD3075DN56 , WSD3095DN56 , WSD30L120DN56 , WSD30L20DN , WSD30L30DN , WSD30L40DN , WSD30L60DN56 , WSD30L90DN56 .

History: WMJ9N90D1B | VS3628DE-G | SI2315

 

 

 


History: WMJ9N90D1B | VS3628DE-G | SI2315

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: ASU70R600E | ASU65R850E | ASU65R550E | ASU65R350E | ASR65R120EFD | ASR65R046EFD | ASQ65R046EFD | ASM65R280E | ASM60R330E | ASE70R950E | ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E

 

 

 

Popular searches

50n06 | mje350 | 2n3866 | irf 3205 | 2n5088 equivalent | d882 transistor | 2n3771 | s9018

 

 

↑ Back to Top
.