Справочник MOSFET. WSD3070DN

 

WSD3070DN Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WSD3070DN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 62.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12.2 ns
   Cossⓘ - Выходная емкость: 510 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0034 Ohm
   Тип корпуса: DFN3.3X3.3-8-EP
     - подбор MOSFET транзистора по параметрам

 

WSD3070DN Datasheet (PDF)

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wsd3070dn.pdfpdf_icon

WSD3070DN

WSD3070DNN-Ch MOSFETFeatures Product Summery 100% UIS + R Testedg BVDSS RDSON ID Avalanche Rated25V 3.4m(max.) 70A Reliable an d Rugged Lead Fre e an d Green Devices AvailableDFN3.3x3.3-8-EP Pin Configuration (RoHS Complia nt)Applications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.Absolute Maximum Ratings (TA = 25C Unl

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wsd3075dn56.pdfpdf_icon

WSD3070DN

WSD3075DN56N-Ch MOSFETGeneral Description Product SummeryThe WSD3075DN56 is the highest performance BVDSS RDSON IDtrench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 6.5m 75Agate charge for most of the synchronous buck converter applications . The WSD3075DN56 meet the RoHS and Green Applications Product requirement 100% EAS guar

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wsd30l20dn.pdfpdf_icon

WSD3070DN

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

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wsd3067dn56.pdfpdf_icon

WSD3070DN

WSD3067DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24ARDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8AThe WSD3067 meet the RoHS and Green Application

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ZXMN0545G4 | SE4060 | IPA600N25NM3S

 

 
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