WSD3075DN56 Todos los transistores

 

WSD3075DN56 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WSD3075DN56
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 46 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12.2 nS
   Cossⓘ - Capacitancia de salida: 163 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: DFN5X6-8
 

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WSD3075DN56 Datasheet (PDF)

 ..1. Size:2118K  winsok
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WSD3075DN56

WSD3075DN56N-Ch MOSFETGeneral Description Product SummeryThe WSD3075DN56 is the highest performance BVDSS RDSON IDtrench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 6.5m 75Agate charge for most of the synchronous buck converter applications . The WSD3075DN56 meet the RoHS and Green Applications Product requirement 100% EAS guar

 8.1. Size:595K  winsok
wsd3070dn.pdf pdf_icon

WSD3075DN56

WSD3070DNN-Ch MOSFETFeatures Product Summery 100% UIS + R Testedg BVDSS RDSON ID Avalanche Rated25V 3.4m(max.) 70A Reliable an d Rugged Lead Fre e an d Green Devices AvailableDFN3.3x3.3-8-EP Pin Configuration (RoHS Complia nt)Applications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.Absolute Maximum Ratings (TA = 25C Unl

 9.1. Size:1410K  winsok
wsd30l20dn.pdf pdf_icon

WSD3075DN56

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

 9.2. Size:4767K  winsok
wsd3067dn56.pdf pdf_icon

WSD3075DN56

WSD3067DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24ARDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8AThe WSD3067 meet the RoHS and Green Application

Otros transistores... WSD3042DN56 , WSD3045DN , WSD3050DN , WSD3056DN , WSD3066DN , WSD3067DN56 , WSD3069DN56 , WSD3070DN , RU7088R , WSD3095DN56 , WSD30L120DN56 , WSD30L20DN , WSD30L30DN , WSD30L40DN , WSD30L60DN56 , WSD30L90DN56 , WSD3810DN .

History: MCAC50N10Y-TP | MT04N005AL

 

 
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