All MOSFET. WSD3075DN56 Datasheet

 

WSD3075DN56 Datasheet and Replacement


   Type Designator: WSD3075DN56
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12.2 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: DFN5X6-8
 

 WSD3075DN56 substitution

   - MOSFET ⓘ Cross-Reference Search

 

WSD3075DN56 Datasheet (PDF)

 ..1. Size:2118K  winsok
wsd3075dn56.pdf pdf_icon

WSD3075DN56

WSD3075DN56N-Ch MOSFETGeneral Description Product SummeryThe WSD3075DN56 is the highest performance BVDSS RDSON IDtrench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 6.5m 75Agate charge for most of the synchronous buck converter applications . The WSD3075DN56 meet the RoHS and Green Applications Product requirement 100% EAS guar

 8.1. Size:595K  winsok
wsd3070dn.pdf pdf_icon

WSD3075DN56

WSD3070DNN-Ch MOSFETFeatures Product Summery 100% UIS + R Testedg BVDSS RDSON ID Avalanche Rated25V 3.4m(max.) 70A Reliable an d Rugged Lead Fre e an d Green Devices AvailableDFN3.3x3.3-8-EP Pin Configuration (RoHS Complia nt)Applications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.Absolute Maximum Ratings (TA = 25C Unl

 9.1. Size:1410K  winsok
wsd30l20dn.pdf pdf_icon

WSD3075DN56

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

 9.2. Size:4767K  winsok
wsd3067dn56.pdf pdf_icon

WSD3075DN56

WSD3067DN56N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSD3067DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 30V 15m 24ARDSON and gate charge for most of the synchronous buck converter applications . -30V 11m -19.8AThe WSD3067 meet the RoHS and Green Application

Datasheet: WSD3042DN56 , WSD3045DN , WSD3050DN , WSD3056DN , WSD3066DN , WSD3067DN56 , WSD3069DN56 , WSD3070DN , RU7088R , WSD3095DN56 , WSD30L120DN56 , WSD30L20DN , WSD30L30DN , WSD30L40DN , WSD30L60DN56 , WSD30L90DN56 , WSD3810DN .

History: IPI80P04P4L-04 | STH6N95K5-2 | WMR140NV6LG4 | IPL60R185P7 | SFQ030N100C3 | IRL540NLPBF | STB46NF30

Keywords - WSD3075DN56 MOSFET datasheet

 WSD3075DN56 cross reference
 WSD3075DN56 equivalent finder
 WSD3075DN56 lookup
 WSD3075DN56 substitution
 WSD3075DN56 replacement

 

 
Back to Top

 


 
.