WSD30L40DN Todos los transistores

 

WSD30L40DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WSD30L40DN
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: DFN3X3-8
     - Selección de transistores por parámetros

 

WSD30L40DN Datasheet (PDF)

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WSD30L40DN

WSD30L40DNP-Ch MOSFETGeneral Description Product SummeryThe WSD30L40DN is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -30V 11m -40Agate charge for most of the synchronous buck converter applications . Applications The WSD30L40DN meet the RoHS and Green Product requirement 100% EAS gua

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wsd30l20dn.pdf pdf_icon

WSD30L40DN

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

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wsd30l90dn56.pdf pdf_icon

WSD30L40DN

WSD30L90DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD30L90DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 6.4m -90Acharge for most of the synchronous buck converter applications . Applications The WSD30L90DN56 meet the RoHS and Green High Frequency Point-of-Load

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wsd30l120dn56.pdf pdf_icon

WSD30L40DN

WSD30L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD30L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 3.6m -120Acharge for most of the synchronous buck converter applications . Applications The WSD30L120DN56 meet the RoHS and Green High Frequency Point-of-L

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History: AP9918GJ | FRS240H | 12N65KL-TF3-T | RUH1H139R-A | FQD10N20CTF | AFN3402 | KI2312DS

 

 
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