All MOSFET. WSD30L40DN Datasheet

 

WSD30L40DN Datasheet and Replacement


   Type Designator: WSD30L40DN
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 32.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DFN3X3-8
      - MOSFET Cross-Reference Search

 

WSD30L40DN Datasheet (PDF)

 ..1. Size:801K  winsok
wsd30l40dn.pdf pdf_icon

WSD30L40DN

WSD30L40DNP-Ch MOSFETGeneral Description Product SummeryThe WSD30L40DN is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -30V 11m -40Agate charge for most of the synchronous buck converter applications . Applications The WSD30L40DN meet the RoHS and Green Product requirement 100% EAS gua

 8.1. Size:1410K  winsok
wsd30l20dn.pdf pdf_icon

WSD30L40DN

WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast

 8.2. Size:611K  winsok
wsd30l90dn56.pdf pdf_icon

WSD30L40DN

WSD30L90DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD30L90DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 6.4m -90Acharge for most of the synchronous buck converter applications . Applications The WSD30L90DN56 meet the RoHS and Green High Frequency Point-of-Load

 8.3. Size:919K  winsok
wsd30l120dn56.pdf pdf_icon

WSD30L40DN

WSD30L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD30L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 3.6m -120Acharge for most of the synchronous buck converter applications . Applications The WSD30L120DN56 meet the RoHS and Green High Frequency Point-of-L

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: TP4812NR | FTK3401 | AP2C016LMT | APT84M50B2 | IRLHS6342PBF | SVS11N70MJD2 | S-LP2307LT1G

Keywords - WSD30L40DN MOSFET datasheet

 WSD30L40DN cross reference
 WSD30L40DN equivalent finder
 WSD30L40DN lookup
 WSD30L40DN substitution
 WSD30L40DN replacement

 

 
Back to Top

 


 
.