WSD30L60DN56 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSD30L60DN56
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 315 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: DFN5X6A-8-EP
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WSD30L60DN56 Datasheet (PDF)
wsd30l60dn56.pdf

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wsd30l20dn.pdf

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wsd30l90dn56.pdf

WSD30L90DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD30L90DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 6.4m -90Acharge for most of the synchronous buck converter applications . Applications The WSD30L90DN56 meet the RoHS and Green High Frequency Point-of-Load
wsd30l120dn56.pdf

WSD30L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD30L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 3.6m -120Acharge for most of the synchronous buck converter applications . Applications The WSD30L120DN56 meet the RoHS and Green High Frequency Point-of-L
Otros transistores... WSD3069DN56 , WSD3070DN , WSD3075DN56 , WSD3095DN56 , WSD30L120DN56 , WSD30L20DN , WSD30L30DN , WSD30L40DN , HY1906P , WSD30L90DN56 , WSD3810DN , WSD40120DN56 , WSD40120DN56G , WSD4023DN56 , WSD4038DN , WSD4050DN , WSD4062DN56 .
History: STD30NF06T4 | BSC096N10LS5 | IRFB4321GPBF | SM4301PSK | IRFB3006PBF | 2SK1359 | HM13N50
History: STD30NF06T4 | BSC096N10LS5 | IRFB4321GPBF | SM4301PSK | IRFB3006PBF | 2SK1359 | HM13N50



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