WSD4062DN56 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSD4062DN56
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 76 nC
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
Paquete / Cubierta: DFN5X6-8L
Búsqueda de reemplazo de WSD4062DN56 MOSFET
WSD4062DN56 Datasheet (PDF)
wsd4062dn56.pdf

WSD4062DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD4062DN56 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with 40V 7.0mextreme high cell density , which provide 62Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD4062DN56 meet the RoHS and Green Product requirement , 100% EAS
wsd4066dn.pdf

WSD4066DNDual N-Ch MOSFETGeneral Description Product Summery The WSD4066DN is the highest performance BVDSS RDSON ID trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent 40V 17m 14ARDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD4066DN meet the RoHS and High Frequency Point-of-Load Synch
wsd4070dn.pdf

WSD4070DN N-Ch MOSFETGeneral Description Product SummeryThe WSD4070DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which 40V 4.5m 68Aprovide excellent RDSON and gate charge for most of the synchronous Applications buck converter applications . The WSD4070DN meet the High Frequency Point-of-Load Synchronous RoHS
wsd40120dn56.pdf

WSD40120DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD40120DN is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell 40V 1.85m 120Adensity , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD40120DN meet the RoHS and Green Product requirement , 100% EAS g
Otros transistores... WSD30L60DN56 , WSD30L90DN56 , WSD3810DN , WSD40120DN56 , WSD40120DN56G , WSD4023DN56 , WSD4038DN , WSD4050DN , 5N50 , WSD4066DN , WSD4070DN , WSD4080DN56 , WSD4098DN56 , WSD40N10GDN56 , WSD40P10DN56 , WSD45P10DN56 , WSD50P10ADN56 .
History: KIA50N03-251
History: KIA50N03-251



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