Справочник MOSFET. WSD4062DN56

 

WSD4062DN56 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WSD4062DN56
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 76 nC
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 140 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0105 Ohm
   Тип корпуса: DFN5X6-8L

 Аналог (замена) для WSD4062DN56

 

 

WSD4062DN56 Datasheet (PDF)

 ..1. Size:2121K  winsok
wsd4062dn56.pdf

WSD4062DN56
WSD4062DN56

WSD4062DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD4062DN56 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with 40V 7.0mextreme high cell density , which provide 62Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD4062DN56 meet the RoHS and Green Product requirement , 100% EAS

 8.1. Size:1183K  winsok
wsd4066dn.pdf

WSD4062DN56
WSD4062DN56

WSD4066DNDual N-Ch MOSFETGeneral Description Product Summery The WSD4066DN is the highest performance BVDSS RDSON ID trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent 40V 17m 14ARDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD4066DN meet the RoHS and High Frequency Point-of-Load Synch

 9.1. Size:1896K  winsok
wsd4070dn.pdf

WSD4062DN56
WSD4062DN56

WSD4070DN N-Ch MOSFETGeneral Description Product SummeryThe WSD4070DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which 40V 4.5m 68Aprovide excellent RDSON and gate charge for most of the synchronous Applications buck converter applications . The WSD4070DN meet the High Frequency Point-of-Load Synchronous RoHS

 9.2. Size:1153K  winsok
wsd40120dn56.pdf

WSD4062DN56
WSD4062DN56

WSD40120DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD40120DN is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell 40V 1.85m 120Adensity , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD40120DN meet the RoHS and Green Product requirement , 100% EAS g

 9.3. Size:661K  winsok
wsd4098dn56.pdf

WSD4062DN56
WSD4062DN56

WSD4098DN56Dual N-Ch MOSFETGeneral Description Product Summery The WSD4098DN56 is the highest BVDSS RDSON ID performance trench Dual N-Ch MOSFET with extreme high cell density,which provide 40V 7.8m 22Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD4098DN56 meet the RoHS High Frequency Point-of-Load

 9.4. Size:2116K  winsok
wsd40p10dn56.pdf

WSD4062DN56
WSD4062DN56

WSD40P10DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD40P10DN56 is the highest BVDSS RDSON ID performance trench P-ch MOSFET with extreme high cell density , which provide -100V 78m -30Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD40P10DN56 meet the RoHS and High Frequency Point-of-Load Sy

 9.5. Size:2624K  winsok
wsd4023dn56.pdf

WSD4062DN56
WSD4062DN56

WSD4023DN56N-Ch and P-Channel MOSFETProduct SummeryGeneral Description The WSD4023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 40V 16m 32Acharge for most of the synchronous buck converter -40V 30m -22Aapplications . The WSD4023DN56 meet the RoHS and Green Product r

 9.6. Size:1483K  winsok
wsd4038dn.pdf

WSD4062DN56
WSD4062DN56

WSD4038DN N-Ch MOSFETGeneral Description Product SummeryThe WSD4038DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which provide 40V 13m 38Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD4038DN meet the RoHS and High Frequency Point-of-Load Synchronou

 9.7. Size:1509K  winsok
wsd40n10gdn56.pdf

WSD4062DN56
WSD4062DN56

WSD40N10GDN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD40N10GDN56 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 16m 40Aand gate charge for most of the synchronous buck converter applications . Applications The WSD40N10GDN56 meet the RoHS and Green Power Management in TV Co

 9.8. Size:2081K  winsok
wsd40120dn56g.pdf

WSD4062DN56
WSD4062DN56

WSD40120DN56G N-Ch MOSFETGeneral Description Product SummeryThe WSD40120DN use advanced SGT BVDSS RDSON ID MOSFET technology to provide low RDS(ON), 40V 1.8m 120Alow gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better Applications ruggedness and suitable to use in Consumer electronic power supply S

 9.9. Size:1971K  winsok
wsd4080dn56.pdf

WSD4062DN56
WSD4062DN56

WSD4080DN56N-Channel MOSFETGeneral Description Product SummeryThe WSD4080DN56 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 85A40V 4.5mcharge for most of the synchronous buck converter applications . The WSD4080DN56 meet the RoHS and Green Applications Product requirement 100% E

 9.10. Size:1684K  winsok
wsd4050dn.pdf

WSD4062DN56
WSD4062DN56

WSD4050DN N-Ch MOSFETGeneral Description Product SummeryThe WSD4050DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which 40V 7.4m 50Aprovide excellent RDSON and gate charge for most of the synchronous buck Applications converter applications . The WSD4050DN meet the RoHS High Frequency Point-of-Load Synchronous

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