WSD6056DN56 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSD6056DN56
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 67 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 28 nC
trⓘ - Tiempo de subida: 13.5 nS
Cossⓘ - Capacitancia de salida: 275 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Paquete / Cubierta: DFN5X6C-8-EP2
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WSD6056DN56 Datasheet (PDF)
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WSD60N10GDN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD60N10GDN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 100V 8.5m 60Acharge for most of the synchronous buck converter applications . Applications The WSD60N10GDN56 meet the RoHS and Green Power Management in TV C
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