WSD6056DN56 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSD6056DN56
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28 nC
trⓘ - Rise Time: 13.5 nS
Cossⓘ - Output Capacitance: 275 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: DFN5X6C-8-EP2
WSD6056DN56 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSD6056DN56 Datasheet (PDF)
wsd6056dn56.pdf
WSD6056DN56Dual N-Ch MOSFETGeneral Description Product Summery The WSD6056DN56 is the highest BVDSS RDSON ID performance trench Dual N-Ch MOSFET with extreme high cell density,which provide 60V 16m 45Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD6056DN56 meet the High Frequency Point-of-Load Synchr
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WSD6040DN56 N-Ch MOSFETGeneral Description Product SummeryBVDSS RDSON IDThe WSD6040DN56 is the highest performance trench N-Ch MOSFET with extreme high cell 60V 17.5m 36Adensity,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .Applications Secondary Side Synchronous RectificationThe WSD6040DN56 meet the RoHS and G
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WSD60N10GDN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD60N10GDN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 100V 8.5m 60Acharge for most of the synchronous buck converter applications . Applications The WSD60N10GDN56 meet the RoHS and Green Power Management in TV C
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