WSF3040 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSF3040
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 37.5 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 43 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 9.8 nC
Tiempo de subida (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 131 pF
Resistencia entre drenaje y fuente RDS(on): 0.012 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET WSF3040
WSF3040 Datasheet (PDF)
wsf3040.pdf
WSF3040N-Ch MOSFETGeneral Description Product SummeryThe WSF3040 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 30V 10m 43Afor most of the synchronous buck converter applications . Applications The WSF3040 meet the RoHS and Green Product requirement 100% EAS guaranteed with
wsf3087.pdf
WSF3087N-Ch MOSFETGeneral Description Product SummeryThe WSF3087 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 30V 5.0m 70Acharge for most of the synchronous buck converter applications . Applications The WSF3087 meet the RoHS and Green Product requirement , 100% EAS High Freque
wsf30100d.pdf
WSF30100D N-Ch MOSFETGeneral Description Product SummeryThe WSF30100D is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most 30V 3.6m 100Aof the synchronous buck converter applications . The WSF30100D meet the RoHS and Green Product Applications requirement , 100% EAS guaranteed
wsf3055.pdf
WSF3055N-Ch and P-Channel MOSFET Product SummeryDescriptionThe WSF3055 uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and 30 15m 24Aoperation with gate voltages as low as 4.5V.This device -30 11m -19.8Ais suitable for use as a Battery protection or in otherApplicationSwitching application Motor Control.Protable equipment app
wsf3038.pdf
WSF3038N-Ch MOSFETGeneral Description Product SummeryThe WSF3038 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 30V 15m 38Afor most of the synchronous buck converter applications . Applications The WSF3038 meet the RoHS and Green High Frequency Point-of-Load Synchronous
wsf3013.pdf
WSF3013 N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSF3013 is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 30V 14m 12Agate charge for most of the synchronous buck -11.5A-30V 23mconverter applications . The WSF3013 meet the RoHS and Green Applications
wsf3036.pdf
WSF3036N-Ch MOSFETGeneral Description Product SummeryThe WSF3036 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 30V 16m 36Agate charge for most of the synchronous buck converter applications . Applications The WSF3036 meet the RoHS and Green High Frequency Point-of-Load Synchronous
wsf3085a.pdf
WSF3085AN-Ch MOSFETGeneral Description Product SummeryThe WSF3085A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 4.5m 85Agate charge for most of the synchronous buck converter applications . Applications The WSF3085Ameet the RoHS and Green Product requirement , 100% EAS guaranteed
wsf30100.pdf
WSF30100 N-Ch MOSFETGeneral Description Product SummeryThe WSF30100 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most30V 2.5m 100Aof the synchronous buck converter applications . The WSF30100 meet the RoHS and Green Product Applications requirement , 100% EAS guaranteed wit
wsf30p06.pdf
WSF30P06P-Ch MOSFETGeneral Description Product SummeryThe WSF30P06 is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -60V 38m -23.5Agate charge for most of the synchronous buck converter applications . Applications The WSF30P06 meet the RoHS and Green Product requirement , 100% EAS High F
wsf3085.pdf
WSF3085N-Ch MOSFETGeneral Description Product SummeryThe WSF3085 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 4.5m 85Afor most of the synchronous buck converter applications . Applications The WSF3085meet the RoHS and Green Product requirement , 100% EAS guaranteed H
wsf3036a.pdf
WSF3036AN-Ch MOSFETGeneral Description Product SummeryThe WSF3036A is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 30V 19m 32Agate charge for most of the synchronous buck converter applications . Applications The WSF3036A meet the RoHS and High Frequency Point-of-Load Synchronous Gr
wsf3012.pdf
WSF3012N-Ch and P-Channel MOSFETProduct SummeryGeneral Description The WSF3012 is the highest performance trench N-ch BVDSS RDSON ID and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for 30V 18m 22Amost of the synchronous buck converter applications . -30V 30m -15AThe WSF3012 meet the RoHS and Green Product requirement 1
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