WSF3040 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSF3040
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 37.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 43 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 9.8 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 131 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO252
WSF3040 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSF3040 Datasheet (PDF)
wsf3040.pdf
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WSF3040N-Ch MOSFETGeneral Description Product SummeryThe WSF3040 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 30V 10m 43Afor most of the synchronous buck converter applications . Applications The WSF3040 meet the RoHS and Green Product requirement 100% EAS guaranteed with
wsf3087.pdf
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WSF3087N-Ch MOSFETGeneral Description Product SummeryThe WSF3087 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 30V 5.0m 70Acharge for most of the synchronous buck converter applications . Applications The WSF3087 meet the RoHS and Green Product requirement , 100% EAS High Freque
wsf30100d.pdf
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WSF30100D N-Ch MOSFETGeneral Description Product SummeryThe WSF30100D is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most 30V 3.6m 100Aof the synchronous buck converter applications . The WSF30100D meet the RoHS and Green Product Applications requirement , 100% EAS guaranteed
wsf3055.pdf
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WSF3055N-Ch and P-Channel MOSFET Product SummeryDescriptionThe WSF3055 uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and 30 15m 24Aoperation with gate voltages as low as 4.5V.This device -30 11m -19.8Ais suitable for use as a Battery protection or in otherApplicationSwitching application Motor Control.Protable equipment app
wsf3038.pdf
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WSF3038N-Ch MOSFETGeneral Description Product SummeryThe WSF3038 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 30V 15m 38Afor most of the synchronous buck converter applications . Applications The WSF3038 meet the RoHS and Green High Frequency Point-of-Load Synchronous
wsf3013.pdf
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WSF3013 N-Ch and P-Channel MOSFETGeneral Description Product SummeryThe WSF3013 is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 30V 14m 12Agate charge for most of the synchronous buck -11.5A-30V 23mconverter applications . The WSF3013 meet the RoHS and Green Applications
wsf3036.pdf
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WSF3036N-Ch MOSFETGeneral Description Product SummeryThe WSF3036 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 30V 16m 36Agate charge for most of the synchronous buck converter applications . Applications The WSF3036 meet the RoHS and Green High Frequency Point-of-Load Synchronous
wsf3085a.pdf
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WSF3085AN-Ch MOSFETGeneral Description Product SummeryThe WSF3085A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 4.5m 85Agate charge for most of the synchronous buck converter applications . Applications The WSF3085Ameet the RoHS and Green Product requirement , 100% EAS guaranteed
wsf30100.pdf
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WSF30100 N-Ch MOSFETGeneral Description Product SummeryThe WSF30100 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most30V 2.5m 100Aof the synchronous buck converter applications . The WSF30100 meet the RoHS and Green Product Applications requirement , 100% EAS guaranteed wit
wsf30p06.pdf
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WSF30P06P-Ch MOSFETGeneral Description Product SummeryThe WSF30P06 is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -60V 38m -23.5Agate charge for most of the synchronous buck converter applications . Applications The WSF30P06 meet the RoHS and Green Product requirement , 100% EAS High F
wsf3085.pdf
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WSF3085N-Ch MOSFETGeneral Description Product SummeryThe WSF3085 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 4.5m 85Afor most of the synchronous buck converter applications . Applications The WSF3085meet the RoHS and Green Product requirement , 100% EAS guaranteed H
wsf3036a.pdf
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WSF3036AN-Ch MOSFETGeneral Description Product SummeryThe WSF3036A is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 30V 19m 32Agate charge for most of the synchronous buck converter applications . Applications The WSF3036A meet the RoHS and High Frequency Point-of-Load Synchronous Gr
wsf3012.pdf
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WSF3012N-Ch and P-Channel MOSFETProduct SummeryGeneral Description The WSF3012 is the highest performance trench N-ch BVDSS RDSON ID and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for 30V 18m 22Amost of the synchronous buck converter applications . -30V 30m -15AThe WSF3012 meet the RoHS and Green Product requirement 1
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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