2N7002MTF Todos los transistores

 ..1. Size:115K  fairchild semi
 2n7002mtf.pdf

N-Channel Small Signal MOSFET 2N7002MTF FEATURES BVDSS = 60 V Lower RDS(on) RDS(on) = 5.0 Improved Inductive Ruggedness Fast Switching Times ID = 200 mA Lower Input Capacitance Extended Safe Operating Area SOT-23 Improved High Temperature Reliability Product Summary 1.Gate 2. Source 3. Drain Part Number BVDSS RDS(on) ID 2N7002 60V 5.0 115mA Absolute Maximum Ratings

 7.1. Size:487K  unikc
 pz2n7002m.pdf

PZ2N7002M N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2 @VGS = 10V 60V 300mA SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 25 TC = 25 C 300 ID Continuous Drain Current mA TC = 100 C 190 IDM 1 A Pulsed Drain C

 7.2. Size:167K  lrc
 l2n7002m3t5g s-l2n7002m3t5g.pdf

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET L2N7002M3T5G 115 mAmps, 60 Volts S-L2N7002M3T5G N Channel SOT 723 3 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 1 ORDERING INFORMATION SOT-723 Device Marking Shipping L2N7002M3T5G 72 8000 Tap

 7.3. Size:171K  niko-sem
 pz2n7002m.pdf

PZ2N7002M N-Channel Logic Level Enhancement NIKO-SEM SOT-23(S) Mode Field Effect Transistor Halogen-Free & Lead-Free Drain PRODUCT SUMMARY Gate V(BR)DSS RDS(ON) ID G. GATE D. DRAIN 60V 2 300mA S. SOURCE ESD PROTECTION DIODE Source ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS

 7.4. Size:1397K  cn tech public
 2n7002m3t5g.pdf