N-Channel Small Signal MOSFET 2N7002MTFFEATURESBVDSS = 60 V Lower RDS(on)RDS(on) = 5.0 Improved Inductive Ruggedness Fast Switching TimesID = 200 mA Lower Input Capacitance Extended Safe Operating AreaSOT-23 Improved High Temperature ReliabilityProduct Summary1.Gate 2. Source 3. DrainPart Number BVDSS RDS(on) ID2N7002 60V 5.0 115mAAbsolute Maximum Ratings

PZ2N7002MN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2 @VGS = 10V60V 300mASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 25TC = 25 C300IDContinuous Drain Current mATC = 100 C190IDM1 APulsed Drain C

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002M3T5G115 mAmps, 60 VoltsS-L2N7002M3T5GNChannel SOT7233 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.21ORDERING INFORMATIONSOT-723Device Marking ShippingL2N7002M3T5G72 8000 Tap

PZ2N7002MN-Channel Logic Level Enhancement NIKO-SEM SOT-23(S) Mode Field Effect Transistor Halogen-Free & Lead-FreeDrainPRODUCT SUMMARY GateV(BR)DSS RDS(ON) ID G. GATE D. DRAIN 60V 2 300mA S. SOURCE ESD PROTECTION DIODE SourceABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS