WSF60N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSF60N06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.8 nS
Cossⓘ - Capacitancia de salida: 125 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: TO252
WSF60N06 Datasheet (PDF)
wsf60n06.pdf

WSF60N06 N-Ch MOSFETGeneral Description Product SummeryThe WSF60N06 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 10m 60Agate charge for most of the synchronous buck converter applications . Applications The WSF60N06 meet the RoHS and Green High Frequency Point-of-Load Synchronous
wsf6012.pdf

WSF6012 N&P-Channel MOSFETGeneral Description Product SummeryThe WSF6012 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 60V 28m 20ARDSON and gate charge for most of the -60V 46m -15Asynchronous buck converter applications . The WSF6012 meet the RoHS and Green Applications Product requir
wsf60100.pdf

WSF60100 N-Ch MOSFETGeneral Description Product SummeryThe WSF60100 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 6m 98Agate charge for most of the synchronous buck converter applications . Applications The WSF60100 meet the RoHS and Green High Frequency Point-of-Load Synchronous
Otros transistores... WSF45P06 , WSF45P10 , WSF50N10 , WSF50N10G , WSF50P04 , WSF50P10 , WSF60100 , WSF6012 , 75N75 , WSF70N10 , WSF70P03 , WSF80N06H , WSF90P03 , WSG02N20 , WSG02P06 , WSG03N10 , WSK140N08 .
History: AP6N3R5S
History: AP6N3R5S



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