WSF60N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSF60N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 5.8 nS
Cossⓘ - Output Capacitance: 125 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO252
WSF60N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSF60N06 Datasheet (PDF)
wsf60n06.pdf
WSF60N06 N-Ch MOSFETGeneral Description Product SummeryThe WSF60N06 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 10m 60Agate charge for most of the synchronous buck converter applications . Applications The WSF60N06 meet the RoHS and Green High Frequency Point-of-Load Synchronous
wsf6012.pdf
WSF6012 N&P-Channel MOSFETGeneral Description Product SummeryThe WSF6012 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent 60V 28m 20ARDSON and gate charge for most of the -60V 46m -15Asynchronous buck converter applications . The WSF6012 meet the RoHS and Green Applications Product requir
wsf60100.pdf
WSF60100 N-Ch MOSFETGeneral Description Product SummeryThe WSF60100 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 6m 98Agate charge for most of the synchronous buck converter applications . Applications The WSF60100 meet the RoHS and Green High Frequency Point-of-Load Synchronous
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
