WSP9936 Todos los transistores

 

WSP9936 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WSP9936
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: SOP8

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WSP9936 Datasheet (PDF)

 ..1. Size:2310K  winsok
wsp9936.pdf

WSP9936
WSP9936

WSP9936Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP9936 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON 20V 14m 8Aand gate charge for most of the small power switching and load switch applications. Applications The WSP9936 meet the RoHS and Green Product requirement with fu

 9.1. Size:1325K  winsok
wsp9926a.pdf

WSP9936
WSP9936

WSP9926ADual N-Channel MOSFETGeneral Description Product SummeryThe WSP9926A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON 20V 20m 7.5Aand gate charge for most of the small power switching and load switch applications. Applications The WSP9926A meet the RoHS and Green Product requirement w

 9.2. Size:1018K  winsok
wsp9926b.pdf

WSP9936
WSP9936

WSP9926BDual N-Channel MOSFETGeneral Description Product SummeryThe WSP9926B is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 17m 8Agate charge for most of the small power switching and load switch applications. Applications The WSP9926B meet the RoHS and Green Product requirement wit

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