WSP9936 MOSFET. Datasheet pdf. Equivalent
Type Designator: WSP9936
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15.6 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 105 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: SOP8
WSP9936 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSP9936 Datasheet (PDF)
wsp9936.pdf
WSP9936Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP9936 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON 20V 14m 8Aand gate charge for most of the small power switching and load switch applications. Applications The WSP9936 meet the RoHS and Green Product requirement with fu
wsp9926a.pdf
WSP9926ADual N-Channel MOSFETGeneral Description Product SummeryThe WSP9926A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON 20V 20m 7.5Aand gate charge for most of the small power switching and load switch applications. Applications The WSP9926A meet the RoHS and Green Product requirement w
wsp9926b.pdf
WSP9926BDual N-Channel MOSFETGeneral Description Product SummeryThe WSP9926B is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 17m 8Agate charge for most of the small power switching and load switch applications. Applications The WSP9926B meet the RoHS and Green Product requirement wit
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: SML100B11
History: SML100B11
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