WSR80N06 Todos los transistores

 

WSR80N06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WSR80N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 110 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 237 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm

Encapsulados: TO220AB

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WSR80N06 datasheet

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wsr80n06.pdf pdf_icon

WSR80N06

WSR80N06 N-Ch MOSFET General Description Product Summery The WSR80N06 uses advanced trench BVDSS RDSON ID technology and design to provide excellent R DS(ON) 60V 9.1m 80A with low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply Feature

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wsr80n08.pdf pdf_icon

WSR80N06

WSR80N08 N-Ch MOSFET General Description Product Summery The WSR80N08 is the highest performance trench RDSON BVDSS ID N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of 80V 8.4m 80A the synchronous buck converter applications . The WSR80N08 meet the RoHS and Green Product Applications requirement,100% EAS guaranteed with

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wsr80n10.pdf pdf_icon

WSR80N06

WSR80N10 N-Ch MOSFET General Description Product Summery The WSR80N10 is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 10m 85A and gate charge for most of the synchronous buck converter applications . Applications The WSR80N10 meet the RoHS and Green Power Management in TV Converter. Pr

 9.1. Size:1300K  winsok
wsr80p06.pdf pdf_icon

WSR80N06

WSR80P06 P-Ch MOSFET General Description Product Summery BVDSS RDSON ID The WSR80P06 uses advanced trench technology to provide excellent RDS(ON), low 18m -60V -50A gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Applications Battery protection or in other Switching application. Battery protection /Load switch /Uninterru

Otros transistores... WSR140N08 , WSR18P10 , WSR200N08 , WSR25N20 , WSR45P10 , WSR4N65F , WSR60N06 , WSR7N65F , 4435 , WSR80N08 , WSR80N10 , WSR80P06 , WST02N10 , WST03P06 , WST05N10 , WST05N10L , WST2004 .

History: SIHP120N60E

 

 

 

 

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