All MOSFET. WSR80N06 Datasheet

 

WSR80N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSR80N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 36 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 237 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: TO220AB

 WSR80N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSR80N06 Datasheet (PDF)

 ..1. Size:3546K  winsok
wsr80n06.pdf

WSR80N06 WSR80N06

WSR80N06 N-Ch MOSFETGeneral Description Product SummeryThe WSR80N06 uses advanced trench BVDSS RDSON ID technology and design to provide excellent RDS(ON) 60V 9.1m 80Awith low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and high frequency circuits Uninterruptible power supplyFeature

 7.1. Size:718K  winsok
wsr80n08.pdf

WSR80N06 WSR80N06

WSR80N08N-Ch MOSFETGeneral Description Product SummeryThe WSR80N08 is the highest performance trench RDSON BVDSS ID N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of 80V 8.4m 80Athe synchronous buck converter applications . The WSR80N08 meet the RoHS and Green Product Applications requirement,100% EAS guaranteed with

 8.1. Size:799K  winsok
wsr80n10.pdf

WSR80N06 WSR80N06

WSR80N10 N-Ch MOSFETGeneral Description Product SummeryThe WSR80N10 is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 10m 85Aand gate charge for most of the synchronous buck converter applications . Applications The WSR80N10 meet the RoHS and Green Power Management in TV Converter. Pr

 9.1. Size:1300K  winsok
wsr80p06.pdf

WSR80N06 WSR80N06

WSR80P06 P-Ch MOSFETGeneral Description Product SummeryBVDSS RDSON ID The WSR80P06 uses advanced trench technology to provide excellent RDS(ON), low 18m-60V -50Agate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Applications Battery protection or in other Switching application. Battery protection /Load switch /Uninterru

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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