WSR80N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WSR80N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 255 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: TO220AB

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WSR80N10 Datasheet (PDF)

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wsr80n10.pdf

WSR80N10 N-Ch MOSFETGeneral Description Product SummeryThe WSR80N10 is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 10m 85Aand gate charge for most of the synchronous buck converter applications . Applications The WSR80N10 meet the RoHS and Green Power Management in TV Converter. Pr

8.1. Size:3546K winsok
wsr80n06.pdf

WSR80N06 N-Ch MOSFETGeneral Description Product SummeryThe WSR80N06 uses advanced trench BVDSS RDSON ID technology and design to provide excellent RDS(ON) 60V 9.1m 80Awith low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and high frequency circuits Uninterruptible power supplyFeature

8.2. Size:718K winsok
wsr80n08.pdf

WSR80N08N-Ch MOSFETGeneral Description Product SummeryThe WSR80N08 is the highest performance trench RDSON BVDSS ID N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of 80V 8.4m 80Athe synchronous buck converter applications . The WSR80N08 meet the RoHS and Green Product Applications requirement,100% EAS guaranteed with

9.1. Size:1300K winsok
wsr80p06.pdf

WSR80P06 P-Ch MOSFETGeneral Description Product SummeryBVDSS RDSON ID The WSR80P06 uses advanced trench technology to provide excellent RDS(ON), low 18m-60V -50Agate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Applications Battery protection or in other Switching application. Battery protection /Load switch /Uninterru

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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