WSR80N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WSR80N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 42 nC
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 255 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de WSR80N10 MOSFET
WSR80N10 Datasheet (PDF)
wsr80n10.pdf

WSR80N10 N-Ch MOSFETGeneral Description Product SummeryThe WSR80N10 is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 10m 85Aand gate charge for most of the synchronous buck converter applications . Applications The WSR80N10 meet the RoHS and Green Power Management in TV Converter. Pr
wsr80n06.pdf

WSR80N06 N-Ch MOSFETGeneral Description Product SummeryThe WSR80N06 uses advanced trench BVDSS RDSON ID technology and design to provide excellent RDS(ON) 60V 9.1m 80Awith low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and high frequency circuits Uninterruptible power supplyFeature
wsr80n08.pdf

WSR80N08N-Ch MOSFETGeneral Description Product SummeryThe WSR80N08 is the highest performance trench RDSON BVDSS ID N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of 80V 8.4m 80Athe synchronous buck converter applications . The WSR80N08 meet the RoHS and Green Product Applications requirement,100% EAS guaranteed with
wsr80p06.pdf

WSR80P06 P-Ch MOSFETGeneral Description Product SummeryBVDSS RDSON ID The WSR80P06 uses advanced trench technology to provide excellent RDS(ON), low 18m-60V -50Agate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Applications Battery protection or in other Switching application. Battery protection /Load switch /Uninterru
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VN0104N2 | FDP42AN15A0 | FRF9150D | BUK552-100A
History: VN0104N2 | FDP42AN15A0 | FRF9150D | BUK552-100A



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMPL1050PU | JMPL1050PK | JMPL1050PG | JMPL1050AY | JMPL1050AUQ | JMPL1050AU | JMPL1050APD | JMPL1050AP | JMPL1050AKQ | JMPL1050AK | JMPL1050AGQ | JMPL1050AG | JMPL1050AE | JMPF8N60BJ | JMPF840BJ | JMPF7N65BJ
Popular searches
tl431 datasheet | 2sd526 | 2n4403 transistor equivalent | 2sc1318 | 2n3055 transistor equivalent | 2sc1740 | c3229 | c2078 transistor