WSR80N10 datasheet, аналоги, основные параметры

Наименование производителя: WSR80N10  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 85 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 255 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm

Тип корпуса: TO220AB

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Аналог (замена) для WSR80N10

- подборⓘ MOSFET транзистора по параметрам

 

WSR80N10 даташит

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wsr80n10.pdfpdf_icon

WSR80N10

WSR80N10 N-Ch MOSFET General Description Product Summery The WSR80N10 is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 10m 85A and gate charge for most of the synchronous buck converter applications . Applications The WSR80N10 meet the RoHS and Green Power Management in TV Converter. Pr

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wsr80n06.pdfpdf_icon

WSR80N10

WSR80N06 N-Ch MOSFET General Description Product Summery The WSR80N06 uses advanced trench BVDSS RDSON ID technology and design to provide excellent R DS(ON) 60V 9.1m 80A with low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply Feature

 8.2. Size:718K  winsok
wsr80n08.pdfpdf_icon

WSR80N10

WSR80N08 N-Ch MOSFET General Description Product Summery The WSR80N08 is the highest performance trench RDSON BVDSS ID N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of 80V 8.4m 80A the synchronous buck converter applications . The WSR80N08 meet the RoHS and Green Product Applications requirement,100% EAS guaranteed with

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wsr80p06.pdfpdf_icon

WSR80N10

WSR80P06 P-Ch MOSFET General Description Product Summery BVDSS RDSON ID The WSR80P06 uses advanced trench technology to provide excellent RDS(ON), low 18m -60V -50A gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Applications Battery protection or in other Switching application. Battery protection /Load switch /Uninterru

Другие IGBT... WSR200N08, WSR25N20, WSR45P10, WSR4N65F, WSR60N06, WSR7N65F, WSR80N06, WSR80N08, SKD502T, WSR80P06, WST02N10, WST03P06, WST05N10, WST05N10L, WST2004, WST2005, WST2011