WNM3025 Todos los transistores

 ..1. Size:2534K  willsemi
 wnm3025.pdf

WNM3025 WNM3025 Single N-Channel, 50V, 0.3A, Power MOSFET Http //www.sh-willsemi.com G V (V) Typical R ( ) DS DS(on) S D 1.3 @V =10V GS 50 1.4 @V =4.5V GS 4.0 @V =1.8V GS ESD Protected DFN1006-3L Descriptions D The WNM3025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate c

 9.1. Size:438K  willsemi
 wnm3003.pdf

WNM3003 WNM3003 N-Channel, 30V, 4.0A, Power MOSFET Http //www.willsemi.com Rds(on) V(BR)DSS ( ) 0.033@ 10V 30V 0.033@ 10V 0.043 @ 4.5V SOT-23 D Descriptions 3 The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 2 1 con

 9.2. Size:1778K  willsemi
 wnm3017.pdf

WNM3017 WNM3017 www.sh-willsemi.com Single N-Channel, 30V, 5.7A, Power MOSFET (4) (5) VDS (V) Typical RDS(on) (m ) (6) (7) (8) 30V 17@ VGS=10V (3) (1) (2) (2) (1) (3) Descriptions DFN2x2-6L D D S The WNM3017 is N-Channel enhancement 6 5 4 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) 7 8 D S with

 9.3. Size:2511K  willsemi
 wnm3018.pdf

WNM3018 WNM3018 Http //www.sh-willsemi.com Small Signal N-Channel, 50V, 0.2A, MOSFET V (V) Typical Rds(on) ( ) DS 1.2@ V =10V GS 1.4@ V =4.5V GS 50 1.9@ V =2.5V GS 5.4@ V =1.8V GS ESD Rating 2000V HBM Descriptions The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench Pin configuration (Top view) technology and design to provide exc

 9.4. Size:465K  willsemi
 wnm3011.pdf

WNM3011 WNM3011 Http //www.willsemi.com N-Channel, 30V, 5.7A, Power MOSFET Rds(on) V(BR)DSS ( ) 0.028@ 10V 30V 0.039@ 4.5V SOT-23-6L S D D Descriptions 6 5 4 The WNM3011 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 1 2 3 D

 9.5. Size:1641K  willsemi
 wnm3013.pdf

WNM3013 WNM3013 Http //www.sh-willsemi.com Small Signal N-Channel, 50V, 0.25A, MOSFET D V (V) Typical Rds(on) ( ) DS 1.2@ V =10V GS 1.4@ V =4.5V GS S 50 G 1.9@ V =2.5V GS 4.0@ V =1.8V GS SOT-723 ESD Rating 2000V HBM D 3 Descriptions 1 2 The WNM3013 is N-Channel enhancement MOS G S Field Effect Transistor. Uses advanced trench technology and design to prov

 9.6. Size:174K  willsemi
 wnm3008.pdf

WNM3008 WNM3008 Http //www.sh-willsemi.com Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( ) 0.044@ VGS=10V 30 0.057@ VGS=4.5V SOT-23 Descriptions D The WNM3008 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversi

 9.7. Size:208K  tysemi
 wnm3003.pdf

Product specification WNM3003 N-Channel, 30V, 4.0A, Power MOSFET Rds(on) V(BR)DSS ( ) 0.033@ 10V 30V 0.033@ 10V 0.043 @ 4.5V SOT-23 D Descriptions 3 The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 2 1 conversion an

 9.8. Size:86K  tysemi
 wnm3008.pdf

Product specification WNM3008 Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( ) 0.044@ VGS=10V 30 0.057@ VGS=4.5V SOT-23 Descriptions D 3 The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch

 9.9. Size:894K  cn vbsemi
 wnm3003.pdf

WNM3003 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G