WNM3025 MOSFET. Datasheet pdf. Equivalent

WNM3025 WNM3025 Single N-Channel, 50V, 0.3A, Power MOSFET Http://www.sh-willsemi.com GV (V) Typical R ()DS DS(on)SD1.3 @V =10VGS50 1.4 @V =4.5VGS4.0 @V =1.8VGS ESD Protected DFN1006-3L Descriptions DThe WNM3025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate c

WNM3003WNM3003N-Channel, 30V, 4.0A, Power MOSFET Http://www.willsemi.com Rds(on) V(BR)DSS()0.033@ 10V30V 0.033@ 10V0.043 @ 4.5V SOT-23 DDescriptions3The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 21con

WNM3017 WNM3017 www.sh-willsemi.com Single N-Channel, 30V, 5.7A, Power MOSFET (4) (5)VDS (V) Typical RDS(on) (m) (6) (7) (8) 30V 17@ VGS=10V (3) (1) (2)(2)(1)(3) Descriptions DFN2x2-6L D D SThe WNM3017 is N-Channel enhancement 6 5 4MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) 7 8D Swith

WNM3018 WNM3018 Http://www.sh-willsemi.com Small Signal N-Channel, 50V, 0.2A, MOSFET V (V) Typical Rds(on) ()DS1.2@ V =10VGS1.4@ V =4.5VGS501.9@ V =2.5VGS5.4@ V =1.8VGSESD Rating: 2000V HBMDescriptions The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench Pin configuration (Top view) technology and design to provide exc

WNM3011WNM3011Http://www.willsemi.com N-Channel, 30V, 5.7A, Power MOSFET Rds(on) V(BR)DSS()0.028@ 10V30V0.039@ 4.5VSOT-23-6L SD DDescriptions6 5 4The WNM3011 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 1 2 3D

WNM3013 WNM3013 Http://www.sh-willsemi.com Small Signal N-Channel, 50V, 0.25A, MOSFET DV (V) Typical Rds(on) ()DS1.2@ V =10VGS1.4@ V =4.5VGSS50G1.9@ V =2.5VGS4.0@ V =1.8VGSSOT-723 ESD Rating: 2000V HBMD3Descriptions 1 2The WNM3013 is N-Channel enhancement MOS G SField Effect Transistor. Uses advanced trench technology and design to prov

WNM3008WNM3008Http://www.sh-willsemi.com Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( )0.044@ VGS=10V300.057@ VGS=4.5V SOT-23 DescriptionsDThe WNM3008 is N-Channel enhancement MOS 3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversi

Product specificationWNM3003N-Channel, 30V, 4.0A, Power MOSFET Rds(on) V(BR)DSS()0.033@ 10V30V 0.033@ 10V0.043 @ 4.5V SOT-23 DDescriptions3The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 21conversion an

Product specificationWNM3008Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) Rds(on) ( )0.044@ VGS=10V300.057@ VGS=4.5V SOT-23 DescriptionsD3The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, power switch

WNM3003www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G