SE100130A Todos los transistores

 

SE100130A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SE100130A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 285 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 130 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 290 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO220

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SE100130A datasheet

 ..1. Size:418K  cn sino-ic
 se100130a.pdf pdf_icon

SE100130A

SE100130A N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V = 100V DS low operation voltage. This device is R =3.0m @V =10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline

 6.1. Size:289K  cn sino-ic
 se100130ga.pdf pdf_icon

SE100130A

SE100130GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V =100V DS charge. R =4m @V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See Di

 8.1. Size:470K  cn sino-ic
 se100150g.pdf pdf_icon

SE100130A

SE100150G N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =100V DS operation voltage. This device is suitable for R =3.5m @V =10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline

 8.2. Size:399K  cn sino-ic
 se10015.pdf pdf_icon

SE100130A

SE10015 N-Channel MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V =100V DS low operation voltage. This device is R =67m @V =10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline Surface Mount De

MOSTRAR MÁS

Otros transistores... WPM3021 , WPM3022 , WPT2N31 , WPT2N32 , FKBA4903 , MT7N65 , MT7N65-220F , SE01P13K , K4145 , SE100130GA , SE10015 , SE100150G , SE100180GA , SE100250GTS , SE1003 , SE10030A , SE10060A .

History: NTD18N06L | SML100S11

 

 

 

 

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