Справочник MOSFET. SE100130A

 

SE100130A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SE100130A
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 285 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 130 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 56 nC
   Время нарастания (tr): 40 ns
   Выходная емкость (Cd): 290 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.004 Ohm
   Тип корпуса: TO220

 Аналог (замена) для SE100130A

 

 

SE100130A Datasheet (PDF)

 ..1. Size:418K  cn sino-ic
 se100130a.pdf

SE100130A SE100130A

SE100130AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 100VDSlow operation voltage. This device is R =3.0m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline

 6.1. Size:289K  cn sino-ic
 se100130ga.pdf

SE100130A SE100130A

SE100130GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =100VDScharge. R =4m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configurationsSee Di

 8.1. Size:470K  cn sino-ic
 se100150g.pdf

SE100130A SE100130A

SE100150GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =100VDSoperation voltage. This device is suitable for R =3.5m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

 8.2. Size:399K  cn sino-ic
 se10015.pdf

SE100130A SE100130A

SE10015N-Channel MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V =100VDSlow operation voltage. This device is R =67m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline Surface Mount De

 8.3. Size:290K  cn sino-ic
 se100180ga.pdf

SE100130A SE100130A

SE100180GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =100VDSoperation voltage. This device is suitable for R =2.5m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Synchronous Rectification in SMPS Hard Switchin

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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