SE100150G Todos los transistores

 

SE100150G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SE100150G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 480 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00381 Ohm
   Paquete / Cubierta: TO220 TO263 TO247
 

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SE100150G Datasheet (PDF)

 ..1. Size:470K  cn sino-ic
 se100150g.pdf pdf_icon

SE100150G

SE100150GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =100VDSoperation voltage. This device is suitable for R =3.5m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

 7.1. Size:399K  cn sino-ic
 se10015.pdf pdf_icon

SE100150G

SE10015N-Channel MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V =100VDSlow operation voltage. This device is R =67m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline Surface Mount De

 8.1. Size:289K  cn sino-ic
 se100130ga.pdf pdf_icon

SE100150G

SE100130GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =100VDScharge. R =4m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configurationsSee Di

 8.2. Size:418K  cn sino-ic
 se100130a.pdf pdf_icon

SE100150G

SE100130AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 100VDSlow operation voltage. This device is R =3.0m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline

MOSTRAR MÁS

Otros transistores... WPT2N32 , FKBA4903 , MT7N65 , MT7N65-220F , SE01P13K , SE100130A , SE100130GA , SE10015 , 12N60 , SE100180GA , SE100250GTS , SE1003 , SE10030A , SE10060A , SE10080A , SE100P60 , SE120120G .

History: IRFB4228PBF

 

 
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