SE100150G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SE100150G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 480 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00381 Ohm
   Paquete / Cubierta: TO220 TO263 TO247

Búsqueda de reemplazo de MOSFET SE100150G

SE100150G Datasheet (PDF)

..1. Size:470K cn sino-ic
se100150g.pdf

SE100150GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =100VDSoperation voltage. This device is suitable for R =3.5m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

7.1. Size:399K cn sino-ic
se10015.pdf

SE10015N-Channel MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V =100VDSlow operation voltage. This device is R =67m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline Surface Mount De

8.1. Size:289K cn sino-ic
se100130ga.pdf

SE100130GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =100VDScharge. R =4m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configurationsSee Di

8.2. Size:418K cn sino-ic
se100130a.pdf

SE100130AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 100VDSlow operation voltage. This device is R =3.0m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline

8.3. Size:290K cn sino-ic
se100180ga.pdf

SE100180GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =100VDSoperation voltage. This device is suitable for R =2.5m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Synchronous Rectification in SMPS Hard Switchin

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: TMD7N65AZ | TMPF830AZ

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