SE100150G - аналоги, параметры транзистора - Справочник транзисторов

SE100150G даташит

..1. Size:470K cn sino-ic
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SE100150G N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =100V DS operation voltage. This device is suitable for R =3.5m @V =10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline

7.1. Size:399K cn sino-ic
se10015.pdf pdf_icon

SE10015 N-Channel MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V =100V DS low operation voltage. This device is R =67m @V =10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline Surface Mount De

8.1. Size:289K cn sino-ic
se100130ga.pdf pdf_icon

SE100130GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V =100V DS charge. R =4m @V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See Di

8.2. Size:418K cn sino-ic
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SE100130A N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V = 100V DS low operation voltage. This device is R =3.0m @V =10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline