SE100250GTS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SE100250GTSN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 100VDSlow operation voltage. This device is R =2.5m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outlin

SE10080AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =100VDSVoltage and Current Improved Shoot-Through R =9.9m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

SE100P60P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = -100VDSlow operation voltage. This device is R =18m @V =-10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline

SE10060AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =100VDSoperation voltage. This device is suitable for R =14m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

SE100150GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =100VDSoperation voltage. This device is suitable for R =3.5m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

SE10015N-Channel MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V =100VDSlow operation voltage. This device is R =67m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline Surface Mount De

SE100130GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =100VDScharge. R =4m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configurationsSee Di

SE1003N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = 100VDSVoltage and Current Improved Shoot-Through R = 230m @ V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

SE100130AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = 100VDSlow operation voltage. This device is R =3.0m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline

SE100180GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =100VDSoperation voltage. This device is suitable for R =2.5m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Synchronous Rectification in SMPS Hard Switchin

SE10030AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =100VDSVoltage and Current Improved Shoot-Through R =25m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations