FCA47N60F109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FCA47N60F109
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 417 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: TO3PN

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FCA47N60F109 Datasheet (PDF)

5.1. Size:191K fairchild semi
fca47n60f.pdf

January 2009 TMSuperFETFCA47N60F 600V N-Channel MOSFET, FRFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance.

5.2. Size:2138K onsemi
fca47n60f.pdf

201 FCA47N60FN-Channel SuperFET FRFET MOSFET600 V, 47 A, 73 m 650 V @ TJ = 150 CSuperFET MOSFET (SJ) RDS(on) = 62 mMOSFET

6.1. Size:1062K fairchild semi
fch47n60 f133 fca47n60 fca47n60 f109.pdf

December 2008TMSuperFETFCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lowe

6.2. Size:1448K onsemi
fca47n60.pdf