All MOSFET. FCA47N60F109 Datasheet

 

FCA47N60F109 Datasheet and Replacement


   Type Designator: FCA47N60F109
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO3PN
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FCA47N60F109 Datasheet (PDF)

 5.1. Size:191K  fairchild semi
 fca47n60f.pdf pdf_icon

FCA47N60F109

January 2009 TMSuperFETFCA47N60F 600V N-Channel MOSFET, FRFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance.

 5.2. Size:2138K  onsemi
 fca47n60f.pdf pdf_icon

FCA47N60F109

201 FCA47N60FN-Channel SuperFET FRFET MOSFET600 V, 47 A, 73 m 650 V @ TJ = 150 CSuperFET MOSFET (SJ) RDS(on) = 62 mMOSFET

 6.1. Size:1062K  fairchild semi
 fch47n60 f133 fca47n60 fca47n60 f109.pdf pdf_icon

FCA47N60F109

December 2008TMSuperFETFCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lowe

 6.2. Size:1448K  onsemi
 fca47n60.pdf pdf_icon

FCA47N60F109

2017 9 FCA47N60 N SuperFET MOSFET600 V, 47 A, 70 m 650 V @ TJ = 150CSuperFETMOSFET RDS(on) = 58 m(SJ)MOSFET

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